Spacer supported lateral channel FET
First Claim
1. A semiconductor device, comprising:
- a semiconductor material;
a plurality of trenches extending into the semiconductor material from a first main surface of the semiconductor material to form mesas of semiconductor material between the trenches;
a field plate in the trenches;
a body region in the mesas;
a source region in contact with the body region in the mesas;
a plurality of gate electrodes on the first main surface of the semiconductor material and defining a lateral channel region in each of the body regions under the gate electrodes; and
a drain region at a second main surface of the semiconductor material opposing the first main surface,wherein the gate electrodes adjacent opposing sides of the same field plate have the same alignment with respect to that field plate.
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Accused Products
Abstract
A semiconductor device includes a semiconductor material and trenches extending into the semiconductor material from a first main surface of the semiconductor material to form mesas of semiconductor material between the trenches. The device also includes a field plate in the trenches, a body region in the mesas, a source region in contact with the body region in the mesas, and a gate electrode on the first main surface of the semiconductor material and defining a lateral channel region in each of the body regions under the gate electrodes. A drain region is at the opposing main surface of the semiconductor material. The gate electrodes adjacent opposing sides of the same field plate have the same alignment with respect to that field plate. The device can be a MOSFET or HEMT. Corresponding methods of manufacture are also provided.
13 Citations
10 Claims
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1. A semiconductor device, comprising:
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a semiconductor material; a plurality of trenches extending into the semiconductor material from a first main surface of the semiconductor material to form mesas of semiconductor material between the trenches; a field plate in the trenches; a body region in the mesas; a source region in contact with the body region in the mesas; a plurality of gate electrodes on the first main surface of the semiconductor material and defining a lateral channel region in each of the body regions under the gate electrodes; and a drain region at a second main surface of the semiconductor material opposing the first main surface, wherein the gate electrodes adjacent opposing sides of the same field plate have the same alignment with respect to that field plate. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A semiconductor device, comprising:
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a III-nitride semiconductor material; a plurality of trenches extending into the III-nitride semiconductor material from a first main surface of the semiconductor material to form mesas of III-nitride semiconductor material between the trenches; a source region in each of the mesas; a lateral two-dimensional charge carrier gas channel region adjacent the source region in the mesas; a gate electrode on the first main surface of the semiconductor material over the lateral channel region in the mesas; and a drain region, wherein the gate electrodes adjacent opposing sides of the same field plate have the same alignment with respect to that field plate. - View Dependent Claims (9, 10)
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Specification