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Semiconductor device including oxide semiconductor film

  • US 9,324,810 B2
  • Filed: 11/25/2013
  • Issued: 04/26/2016
  • Est. Priority Date: 11/30/2012
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a first electrode;

    a first insulating film over the first electrode;

    an oxide semiconductor film comprising gallium over the first insulating film;

    a first oxide film over and in contact with the oxide semiconductor film;

    a second electrode over the first oxide film;

    a third electrode over the first oxide film; and

    a second oxide film over and in contact with the first oxide film, the second electrode, and the third electrode, andwherein each of the first oxide film and the second oxide film comprises indium, gallium, and zinc,wherein electron affinity of the second oxide film is equal to or lower than electron affinity of the first oxide film, andwherein the electron affinity of the second oxide film is lower than electron affinity of the oxide semiconductor film.

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