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Semiconductor device including nanowire transistor

  • US 9,324,812 B2
  • Filed: 09/17/2014
  • Issued: 04/26/2016
  • Est. Priority Date: 10/02/2013
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • at least one nanowire that is disposed over a substrate, extends to be spaced apart from the substrate, and comprises a channel region;

    a gate that surrounds at least a part of the channel region;

    a gate dielectric film that is disposed between the channel region and the gate;

    a semiconductor layer that extends from the substrate to one end of the at least one nanowire, and comprises a source/drain region that contacts the one end of the at least one nanowire;

    insulating spacers that are disposed between the gate and the source/drain region and between the substrate and the at least one nanowire, and are formed of a material that is different from a material of the gate dielectric film; and

    a buffer layer that is disposed in a first region of the substrate and between the substrate and the gate,wherein the buffer layer is formed of a material that has a lattice constant that is higher than a lattice constant of the substrate.

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