Thermally assisted MRAM including magnetic tunnel junction and vacuum cavity
First Claim
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1. A thermally assisted magnetoresistive random access memory (TAS-MRAM) device, comprising:
- a magnetic tunnel junction interposed between a first electrical contact and a second electrical contact; and
a dielectric layer on an upper surface of the first electrical contact and encapsulating the second electrical contact, the dielectric layer having at least one vacuum cavity between an adjacent outer wall of the magnetic tunnel junction and the dielectric layer; and
at least one resistive strap interposed between the magnetic tunnel junction and at least one of the first electrical contact and the second electrical contact.
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Abstract
A thermally assisted magnetoresistive random access memory (TAS-MRAM) device includes a magnetic tunnel junction interposed between a first electrical contact and a second electrical contact. The TAS-MRAM device further includes a dielectric layer that is formed on an upper surface of the first electrical contact and that encapsulates the second electrical contact. The dialectic layer has at least one vacuum cavity between an adjacent outer wall of the magnetic tunnel junction and the dielectric layer.
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Citations
19 Claims
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1. A thermally assisted magnetoresistive random access memory (TAS-MRAM) device, comprising:
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a magnetic tunnel junction interposed between a first electrical contact and a second electrical contact; and a dielectric layer on an upper surface of the first electrical contact and encapsulating the second electrical contact, the dielectric layer having at least one vacuum cavity between an adjacent outer wall of the magnetic tunnel junction and the dielectric layer; and at least one resistive strap interposed between the magnetic tunnel junction and at least one of the first electrical contact and the second electrical contact. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method of fabricating a thermally assisted magnetoresistive random access memory (TAS-MRAM) device, the method comprising:
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forming a magnetic tunnel junction between a first electrical contact and a second electrical contact; and performing a deposition process to deposit a dielectric layer on an upper surface of the first electrical contact and encapsulate the second electrical contact, wherein at least one vacuum cavity is formed between an adjacent outer wall of the magnetic tunnel junction and the dielectric layer while simultaneously depositing the dielectric layer, and wherein at least one resistive strap is interposed between the magnetic tunnel junction and at least one of the first electrical contact and the second electrical contact. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 18, 19)
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Specification