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Thermally assisted MRAM including magnetic tunnel junction and vacuum cavity

  • US 9,324,937 B1
  • Filed: 03/24/2015
  • Issued: 04/26/2016
  • Est. Priority Date: 03/24/2015
  • Status: Active Grant
First Claim
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1. A thermally assisted magnetoresistive random access memory (TAS-MRAM) device, comprising:

  • a magnetic tunnel junction interposed between a first electrical contact and a second electrical contact; and

    a dielectric layer on an upper surface of the first electrical contact and encapsulating the second electrical contact, the dielectric layer having at least one vacuum cavity between an adjacent outer wall of the magnetic tunnel junction and the dielectric layer; and

    at least one resistive strap interposed between the magnetic tunnel junction and at least one of the first electrical contact and the second electrical contact.

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