Method of manufacturing organic light-emitting display apparatus

• US 9,324,967 B2
• Filed: 10/23/2013
• Issued: 04/26/2016
• Est. Priority Date: 07/25/2013
• Status: Expired due to Fees

• Current Assignee: Samsung Display Company Limited (Samsung Electronics Co. Ltd.)
• Original Assignee: Samsung Display Company Limited (Samsung Electronics Co. Ltd.)
• Inventors: Choi, Jai-Hyuk, Park, Jin-Woo, Lee, Ung-Soo, Choi, Su-Hyuk
• Primary Examiner(s): WILCZEWSKI, MARY A
• Application Number:
  US14/061,421
• Publication Number:
  US 20150028291A1
• Time in Patent Office: 916 Days
• Field of Search: 438/26
• US Class Current: 1/1
• CPC Class Codes: H01L 33/52 Encapsulations
• CPC Class Codes: H01L 33/56 Materials, e.g. epoxy or silicone resin
• CPC Class Codes: H10K 50/844 Encapsulations
• CPC Class Codes: H10K 59/12 Active-matrix OLED [AMOLED] displays
• CPC Class Codes: H10K 59/873 Encapsulations
• CPC Class Codes: Y02E 10/549 Organic PV cells
• CPC Class Codes: Y02P 70/50 Manufacturing or production processes characterised by the final manufactured product

Abstract

A method of manufacturing an organic light-emitting display apparatus includes disposing a low melting glass (LMG) thin film to cover a display unit disposed on a substrate, and radiating an energy beam onto the LMG thin film. Accordingly, an encapsulation layer having excellent sealing characteristics may be rapidly formed, and thus manufacturing process efficiency and product reliability may be improved.

Claims

1. A method of manufacturing an organic light-emitting display apparatus, comprising:

disposing a low melting glass (LMG) thin film to cover a display unit disposed on a substrate; and

radiating an energy beam onto the LMG thin film to heat an exposed surface of the LMG thin film to a heating temperature at or above a glass transition temperature of the LMG thin film,

wherein the radiating of the energy beam is performed in an oxygen-containing atmosphere, and

wherein the LMG thin film comprises tin(II) oxide (SnO) and has a glass-transition temperature of about 250°

C. to about 400°

C.

2. The method of claim 1, wherein the energy beam comprises any one of a laser beam, an electron beam, an ion beam, a neutron beam, a plasma beam, and a pulsed laser beam.

3. The method of claim 1, wherein the energy beam has any one of an infrared wavelength and an ultraviolet wavelength.

4. The method of claim 1, further comprising:

cooling the substrate during the radiating of the energy beam.

5. The method of claim 1, wherein a glass transition temperature of the LMG thin film is higher than a metamorphic temperature of the display unit.

6. The method of claim 1, wherein disposing the LMG thin film comprises any one of sputtering, evaporation, chemical vapor deposition (CVD), pulsed laser deposition (PLD), and plasma spraying.

7. The method of claim 1, wherein the substrate comprises a glass substrate.

8. The method of claim 1, wherein the substrate comprises a flexible substrate.

9. A method of manufacturing an organic light-emitting display apparatus, comprising:

disposing a low melting glass (LMG) thin film to cover a display unit disposed on a substrate;

radiating an energy beam onto the LMG thin film to heat an exposed surface of the LMG thin film to a heating temperature at or above a glass transition temperature of the LMG thin film, wherein the LMG thin film comprises tin(II) oxide (SnO) and has a glass-transition temperature of about 250°

C. to about 400°

C., and the SnO is oxidized into tin dioxide (SnO₂) on a surface of the LMG thin film by the radiating the energy beam in an oxygen-containing atmosphere.

10. The method of claim 9, wherein the LMG thin film further comprises at least one of P₂O₅, tungsten (W), boron (B), niobium (Nb), TiO₂, ZnO, SiO₂, BaO, Al₂O₃, and B₂O₃.

11. A method of manufacturing a sealing structure using a low melting material, comprising:

disposing a low melting material to seal a sealing object disposed on a substrate, the low melting material having a transition temperature lower than a transition temperature of silicon dioxide (SiO₂); and

radiating an energy beam onto the low melting material to heat an exposed surface of the low melting material to a heating temperature at or above the transition temperature of the low melting material,

wherein the low melting material comprises a low melting glass (LMG) thin film,

wherein the LMG thin film comprises tin(II) oxide (SnO) and has a glass-transition temperature of about 250°

C. to about 400°

C., and

wherein the exposed surface of the LMG thin film is oxidized into tin dioxide (SnO₂) by the radiation of the energy beam in an oxygen-containing atmosphere.

12. The method of claim 11, wherein radiating the energy beam comprises controlling the heating temperature and a radiation time of the energy beam such that the radiation of the energy beam does not degrade or damage the sealing object.

13. The method of claim 11, wherein radiating the energy beam comprises controlling the heating temperature and a radiation time of the energy beam based on a metamorphic temperature of the sealing object.

14. The method of claim 11, wherein the sealing object comprises an organic light-emitting display device.

15. The method of claim 11, further comprising cooling the substrate.