Method for forming an optical modulator
First Claim
1. A method for forming an optical modulator, the method comprising:
- providing a substrate comprising a buried oxide layer;
implanting dopants of a first conductivity type into the substrate to form a first doped region;
implanting dopants of a second conductivity type into the substrate to form a second doped region;
wherein a portion of the second doped region is formed over and overlaps with a portion of the first doped region to form a junction between the respective portions of the first doped region and the second doped region, wherein the respective portions of the first doped region and the second doped region are in contact with each other,wherein a remaining portion of the second doped region is located outside of the junction and formed over an intrinsic region of the substrate, wherein a bottom surface of the remaining portion of the second doped region overlaps and is directly on a top surface of the intrinsic region,wherein the first doped region, the second doped region and the intrinsic region are formed over the buried oxide layer; and
wherein the intrinsic region is in between the remaining portion of the second doped region and the buried oxide layer; and
forming a ridge waveguide, wherein the ridge waveguide overlaps with at least a part of the junction.
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Accused Products
Abstract
According to embodiments of the present invention, a method for forming an optical modulator is provided. The method includes providing a substrate, implanting dopants of a first conductivity type into the substrate to form a first doped region, implanting dopants of a second conductivity type into the substrate to form a second doped region, wherein a portion of the second doped region is formed over and overlaps with a portion of the first doped region to form a junction between the respective portions of the first doped region and the second doped region, and wherein a remaining portion of the second doped region is located outside of the junction, and forming a ridge waveguide, wherein the ridge waveguide overlaps with at least a part of the junction.
28 Citations
21 Claims
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1. A method for forming an optical modulator, the method comprising:
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providing a substrate comprising a buried oxide layer; implanting dopants of a first conductivity type into the substrate to form a first doped region; implanting dopants of a second conductivity type into the substrate to form a second doped region; wherein a portion of the second doped region is formed over and overlaps with a portion of the first doped region to form a junction between the respective portions of the first doped region and the second doped region, wherein the respective portions of the first doped region and the second doped region are in contact with each other, wherein a remaining portion of the second doped region is located outside of the junction and formed over an intrinsic region of the substrate, wherein a bottom surface of the remaining portion of the second doped region overlaps and is directly on a top surface of the intrinsic region, wherein the first doped region, the second doped region and the intrinsic region are formed over the buried oxide layer; and wherein the intrinsic region is in between the remaining portion of the second doped region and the buried oxide layer; and forming a ridge waveguide, wherein the ridge waveguide overlaps with at least a part of the junction. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
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21. A method for forming an optical modulator, the method comprising:
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providing a substrate comprising a buried oxide layer; implanting dopants of a first conductivity type into the substrate to form a first doped region; implanting dopants of a second conductivity type into the substrate to form a second doped region; wherein a portion of the second doped region is formed over and overlaps with a portion of the first doped region to form a junction between the respective portions of the first doped region and the second doped region, wherein the respective portions of the first doped region and the second doped region are in contact with each other; wherein a remaining portion of the second doped region is located outside of the junction and formed over an intrinsic region of the substrate; and wherein the first doped region, the second doped region and the intrinsic region are formed over the buried oxide layer; implanting dopants of the first conductivity type into the substrate to form a third doped region, wherein the third doped region is formed over the first doped region, and wherein the portion of the second doped region is formed beneath and overlaps with a portion of the third doped region to form another junction between the respective portions of the third doped region and the second doped region; and forming a ridge waveguide, wherein the ridge waveguide overlaps with at least a part of the junction.
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Specification