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Storage element, storage device, and signal processing circuit

  • US 9,330,759 B2
  • Filed: 05/04/2015
  • Issued: 05/03/2016
  • Est. Priority Date: 01/05/2011
  • Status: Expired due to Fees
First Claim
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1. A signal processing circuit comprising:

  • a register, the register comprising;

    a first storage circuit; and

    a second storage circuit, the second storage circuit comprising;

    a capacitor comprising a pair of electrodes;

    a first transistor; and

    a second transistor,wherein the first storage circuit is a volatile storage circuit,wherein the first transistor comprises a channel formation region comprising an oxide semiconductor material,wherein the second transistor comprises a channel formation region comprising a silicon,wherein one of a source and a drain of the first transistor is electrically connected to one of the pair of electrodes and a gate of the second transistor,wherein the other of the source and the drain of the first transistor is electrically connected to the first storage circuit, andwherein one of a source and a drain of the second transistor is electrically connected to the first storage circuit.

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