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Flash memory module and method for programming a page of flash memory cells

  • US 9,330,767 B1
  • Filed: 09/03/2013
  • Issued: 05/03/2016
  • Est. Priority Date: 08/26/2009
  • Status: Active Grant
First Claim
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1. A method for programming a page of flash memory cells, the method comprises:

  • receiving a program and erase cycle count indication indicative of a number of program and erase cycles of the page of memory cells;

    setting a value of a programming parameter of a programming operation based on the program and erase cycle count indication and on a type of the page;

    wherein the type of the page comprises a least bit significant page and a most significant page;

    wherein the setting of the value of the programming parameter of the programming operation is further based upon a non-uniformity of an actual distribution of threshold voltages of the page of flash memory cell; and

    programming a flash memory cell of the page of flash memory cells by performing the programming operation.

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