Integrated circuit structure with inductor in silicon interposer
First Claim
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1. An integrated circuit structure, comprising:
- an interposer comprising a plurality of conductive layers, a first interconnect region that includes one or more of the plurality of conductive layers, a second interconnect region that includes one or more of the plurality of conductive layers, wherein the first interconnect region is separated from and coupled to the second interconnect region by a plurality of through silicon vias;
a first die coupled to the second interconnect region of the interposer through an internal interconnect structure; and
an inductor implemented within at least one of the conductive layers of the first interconnect region of the interposer and fully enclosed within the interposer;
wherein the inductor comprises a first terminal and a second terminal;
wherein the first terminal is coupled to the first die via the internal interconnect structure and the second terminal is coupled to the first die via the internal interconnect structure; and
wherein the interposer has a substrate resistivity that is higher than a substrate resistivity of the first die.
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Abstract
An integrated circuit structure can include an interposer having a plurality of conductive layers and a die coupled to the interposer through an internal interconnect structure. The integrated circuit structure can include an inductor implemented within at least one of the conductive layers of the interposer. The inductor can include a first terminal and a second terminal. The first terminal and the second terminal can be coupled to the internal interconnect structure.
71 Citations
17 Claims
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1. An integrated circuit structure, comprising:
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an interposer comprising a plurality of conductive layers, a first interconnect region that includes one or more of the plurality of conductive layers, a second interconnect region that includes one or more of the plurality of conductive layers, wherein the first interconnect region is separated from and coupled to the second interconnect region by a plurality of through silicon vias; a first die coupled to the second interconnect region of the interposer through an internal interconnect structure; and an inductor implemented within at least one of the conductive layers of the first interconnect region of the interposer and fully enclosed within the interposer; wherein the inductor comprises a first terminal and a second terminal; wherein the first terminal is coupled to the first die via the internal interconnect structure and the second terminal is coupled to the first die via the internal interconnect structure; and wherein the interposer has a substrate resistivity that is higher than a substrate resistivity of the first die. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. An integrated circuit structure, comprising:
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an interposer comprising a plurality of conductive layers, a first interconnect region that includes one or more of the plurality of conductive layers, a second interconnect region that includes one or more of the plurality of conductive layers, wherein the first interconnect region is separated from and coupled to the second interconnect region by a plurality of through silicon vias; a die coupled to a first planar surface of the second interconnect region of the interposer through an internal interconnect structure; an external interconnect structure configured to couple a second planar surface of the interposer to nodes external to the integrated circuit structure; and an inductor implemented within at least one of the conductive layers of the first interconnect region of the interposer and fully enclosed within the interposer; wherein the inductor comprises a first terminal and a second terminal; wherein the first terminal of the inductor and the second terminal of the inductor each is coupled only to the external interconnect structure; and wherein circuitry external to the integrated circuit structure couples to the inductor without propagating signals through the die. - View Dependent Claims (9, 10, 11, 12, 13)
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14. An integrated circuit structure, comprising:
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an interposer comprising a plurality of conductive layers, a first interconnect region that includes one or more of the plurality of conductive layers, a second interconnect region that includes one or more of the plurality of conductive layers, wherein the first interconnect region is separated from and coupled to the second interconnect region by a plurality of through silicon vias; a first die coupled to a first planar surface of the second interconnect region of the interposer through an internal interconnect structure; an external interconnect structure configured to couple a second planar surface of the interposer circuitry external to the integrated circuit; and an inductor implemented within at least one of the conductive layers of the first interconnect region of the interposer and fully enclosed within the interposer; wherein the interposer has a substrate resistivity that is higher than a substrate resistivity of the first die; wherein a first terminal of the inductor and a second terminal of the inductor each is coupled only to the external interconnect structure; and wherein the circuitry external to the integrated circuit structure couples to the inductor without propagating signals through the first die. - View Dependent Claims (15, 16, 17)
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Specification