Methods of forming patterns on substrates
First Claim
Patent Images
1. A method of forming a pattern on a substrate, comprising:
- forming a homogenous carbon-comprising material directly on a base material;
forming a first masking material over the homogenous carbon-comprising material, the first masking material being separated from the homogenous carbon-containing material by a hardmask material;
forming primary features in the first masking material and subsequently laterally trimming the primary features utilizing an isotropic plasma etch with an etch chemistry consisting of O2, CF4 and at least one member selected from the group consisting of HBr and Cl2;
utilizing the trimmed primary features to form spaced first features comprising the hardmask material over the homogenous carbon-comprising material;
only partially etching into the homogenous carbon-comprising material and forming spaced second features within the homogenous carbon-comprising material which comprise the partially etched homogenous carbon-comprising material and overlying hardmask material;
forming spacers along sidewalls of the spaced second features; and
etching through the hardmask material of the second features and subsequently etching the homogenous carbon-comprising material to the base material using the spacers as a mask and forming spaced third features comprising the spacers and the homogenous carbon-comprising material.
8 Assignments
0 Petitions
Accused Products
Abstract
Methods of forming a pattern on a substrate include forming carbon-comprising material over a base material, and spaced first features over the carbon-comprising material. Etching is conducted only partially into the carbon-comprising material and spaced second features are formed within the carbon-comprising material which comprise the partially etched carbon-comprising material. Spacers can be formed along sidewalls of the spaced second features. The carbon-comprising material can be etched through to the base material using the spacers as a mask. Spaced third features can be formed which comprise the anisotropically etched spacers and the carbon-comprising material.
-
Citations
47 Claims
-
1. A method of forming a pattern on a substrate, comprising:
-
forming a homogenous carbon-comprising material directly on a base material; forming a first masking material over the homogenous carbon-comprising material, the first masking material being separated from the homogenous carbon-containing material by a hardmask material; forming primary features in the first masking material and subsequently laterally trimming the primary features utilizing an isotropic plasma etch with an etch chemistry consisting of O2, CF4 and at least one member selected from the group consisting of HBr and Cl2; utilizing the trimmed primary features to form spaced first features comprising the hardmask material over the homogenous carbon-comprising material; only partially etching into the homogenous carbon-comprising material and forming spaced second features within the homogenous carbon-comprising material which comprise the partially etched homogenous carbon-comprising material and overlying hardmask material; forming spacers along sidewalls of the spaced second features; and etching through the hardmask material of the second features and subsequently etching the homogenous carbon-comprising material to the base material using the spacers as a mask and forming spaced third features comprising the spacers and the homogenous carbon-comprising material. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
-
-
15. A method of forming a pattern on a substrate, comprising:
-
forming a carbon-comprising material on a base material, and a hardmask material over the carbon-comprising material; forming a first masking material over the hardmask material; forming spaced first features in the first masking material and subsequently laterally trimming the first features utilizing an isotropic plasma etch with an etch chemistry consisting of O2, CF4 and at least one member selected from the group consisting of HBr and Cl2, to form trimmed spaced first features over the hardmask material; etching through the hardmask material using the spaced first features as a mask followed by etching only partially into the carbon-comprising material and forming spaced second features within the carbon-comprising material which comprise the hardmask material and the underlying partially etched carbon-comprising material; forming spacers along sidewalls of the spaced second features, the spacers being along sidewalls of the hardmask material and sidewalls of the carbon-comprising material; after forming the spacers, etching to remove the hardmask material from between the spacers to leave the spacers projecting elevationally outward relative to an elevationally outermost part of the carbon-comprising material; and after etching the hardmask material, etching through the carbon-comprising material to the base material using the spacers as a mask and forming spaced third features comprising the spacers and the carbon-comprising material. - View Dependent Claims (16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35)
-
-
36. A method of forming a pattern on a substrate, comprising:
-
forming a carbon-comprising material directly on a semiconductive base material, a hardmask material over the carbon-comprising material, and spaced first features in a first masking material over the hardmask material; laterally trimming the spaced first features utilizing an isotropic plasma etch with an etch chemistry consisting of O2, CF4 and at least one member selected from the group consisting of HBr and Cl2, to formed narrowed spaced first features; etching through the hardmask material using the narrowed spaced first features as a mask followed by etching only partially into the underlying carbon-comprising material and forming spaced second features within the carbon-comprising material which comprise the hardmask material and the partially etched carbon-comprising material; forming spacers along sidewalls of the spaced second features, the spacers being along the hardmask material and the carbon-comprising material; after forming the spacers, etching the hardmask material from between the spacers; and etching through the carbon-comprising material to the base material using the spacers as a mask and forming spaced third features comprising the spacers and the carbon-comprising material, the carbon-comprising material consists essentially of at least one of amorphous carbon and transparent carbon.
-
-
37. A method of forming a pattern on a substrate, comprising:
-
forming a carbon-comprising material directly on a semi-conductive base material, an antireflective hardmask material over the carbon-comprising material, and spaced photoresist-comprising features over the hardmask material; laterally trimming width of the photoresist-comprising features to form spaced photoresist-comprising first features over the antireflective hardmask material;
the lateral trimming utilizing an isotropic plasma etch with an etch chemistry consisting of O2, CF4 and at least one member selected from the group consisting of HBr and Cl2;etching through the antireflective hardmask material using the spaced photoresist-comprising first features as a mask and at least some of which remain after the etching through the antireflective hardmask material; after the etching through the antireflective hardmask material, etching only partially into the carbon-comprising material and forming spaced second features within the carbon-comprising material which comprise the antireflective hardmask material and the underlying partially etched carbon-comprising material, the partial etching into the carbon-comprising material etching all remnant of the spaced photoresist-comprising first features from being received over the base material prior to completion of said partial etching into the carbon-comprising material; forming anisotropically etched spacers along sidewalls of the spaced second features to leave alternating outwardly exposed regions of the carbon-comprising material and the antireflective hardmask material between immediately adjacent of the anisotropically etched spacers; after forming the spacers, etching the antireflective hardmask material from between the anisotropically etched spacers to leave the spacers projecting elevationally outward relative to an elevationally outermost part of the underlying carbon-comprising material; and etching through the carbon-comprising material to the base material using the anisotropically etched spacers as a mask and forming spaced third features comprising the anisotropically etched spacers and the carbon-comprising material. - View Dependent Claims (38)
-
-
39. A method of forming a pattern on a substrate, comprising:
-
forming a material consisting essentially of carbon directly on a semiconductive base material, and spaced first features over the material consisting essentially of carbon; laterally trimming the spaced first features utilizing an isotropic plasma etch with an etch chemistry consisting of O2, CF4 and at least one member selected from the group consisting of HBr and Cl2; only partially etching into the material consisting essentially of carbon and forming spaced second features within the material consisting essentially of carbon which comprise the partially etched material consisting essentially of carbon; forming spacers along sidewalls of the spaced second features, the spacers being along hardmask material and material consisting essentially of carbon; and after forming the spacers, etching through the material consisting essentially of carbon to the base material using the spacers as a mask and forming spaced third features comprising the spacers and the material consisting essentially of carbon. - View Dependent Claims (40, 41)
-
-
42. A method of forming a pattern on a substrate, comprising:
-
forming a material consisting essentially of carbon directly on a semiconductive base material, a hardmask material over the material consisting essentially of carbon, and spaced first features over the hardmask material; laterally trimming the spaced first features utilizing an isotropic plasma etch with an etch chemistry consisting of O2, CF4 and at least one member selected from the group consisting of HBr and Cl2; etching through the hardmask material using the spaced first features as a mask followed by etching only partially into the material consisting essentially of carbon and forming spaced second features within the material consisting essentially of carbon which comprise the hardmask material over the partially etched material consisting essentially of carbon; forming spacers along sidewalls of the spaced second features, the spacers being along hardmask material and material consisting essentially of carbon; etching the hardmask material from between the spacers; and etching through the material consisting essentially of carbon to the base material using the spacers as a mask and forming spaced third features comprising the spacers and the material consisting essentially of carbon. - View Dependent Claims (43, 44)
-
-
45. A method of forming a pattern on a substrate, comprising:
-
forming a material consisting essentially of carbon directly on a semiconductive base material, an antireflective hardmask material over the material consisting essentially of carbon, and spaced photoresist-comprising features over the hardmask material; laterally trimming width of the photoresist-comprising features utilizing an isotropic plasma etch with an etch chemistry consisting of O2, CF4 and at least one member selected from the group consisting of HBr and Cl2, to form narrowed spaced photoresist-comprising first features over the antireflective hardmask material; etching through the antireflective hardmask material using the spaced photoresist-comprising first features as a mask and at least some of which remain after the etching through the antireflective hardmask material; after the etching through the antireflective hardmask material, etching only partially into the underlying material consisting essentially of carbon and forming spaced second features within the material consisting essentially of carbon which comprise the antireflective hardmask material and the partially etched material consisting essentially of carbon, the partial etching into the material consisting essentially of carbon etching all remnant of the spaced photoresist-comprising first features from being received over the base material prior to completion of said partial etching into the material consisting essentially of carbon; forming anisotropically etched spacers along sidewalls of the spaced second features to leave alternating outwardly exposed regions of the material consisting essentially of carbon and the antireflective hardmask material between immediately adjacent of the anisotropically etched spacers; after forming the spacers, etching the antireflective hardmask material from between the anisotropically etched spacers; and etching through the material consisting essentially of carbon to the base material using the anisotropically etched spacers as a mask and forming spaced third features comprising the anisotropically etched spacers and the material consisting essentially of carbon. - View Dependent Claims (46, 47)
-
Specification