Semiconductor device and method for manufacturing the same
First Claim
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1. A semiconductor device comprising:
- a gate electrode layer;
a gate insulating layer over the gate electrode layer;
a non-single-crystal oxide semiconductor film as a channel formation region over the gate insulating layer; and
an insulating layer over the channel formation region,wherein the non-single-crystal oxide semiconductor film comprises a crystal part,wherein a concentration of chlorine in the non-single-crystal oxide semiconductor film is lower than or equal to 2×
1018 atoms/cm3, andwherein the non-single-crystal oxide semiconductor film has a density of higher than 6.0 g/cm3.
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Abstract
To manufacture a highly reliable semiconductor device by giving stable electric characteristics to a transistor. An oxide semiconductor film is deposited by a sputtering method with the use of a polycrystalline sputtering target. In that case, partial pressure of water in a deposition chamber before or in the deposition is set to be lower than or equal to 10−3 Pa, preferably lower than or equal to 10−4 Pa, more preferably lower than or equal to 10−5 Pa. Thus, a dense oxide semiconductor film is obtained. The density of the oxide semiconductor film is higher than 6.0 g/cm3 and lower than 6.375 g/cm3.
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Citations
20 Claims
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1. A semiconductor device comprising:
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a gate electrode layer; a gate insulating layer over the gate electrode layer; a non-single-crystal oxide semiconductor film as a channel formation region over the gate insulating layer; and an insulating layer over the channel formation region, wherein the non-single-crystal oxide semiconductor film comprises a crystal part, wherein a concentration of chlorine in the non-single-crystal oxide semiconductor film is lower than or equal to 2×
1018 atoms/cm3, andwherein the non-single-crystal oxide semiconductor film has a density of higher than 6.0 g/cm3. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A semiconductor device comprising:
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a gate insulating layer over first and second gate electrode layers; and a non-single-crystal oxide semiconductor film over the first and second gate electrode layers with the gate insulating layer interposed therebetween, wherein the non-single-crystal oxide semiconductor film comprises a crystal part, wherein a concentration of chlorine in the non-single-crystal oxide semiconductor film is lower than or equal to 2×
1018 atoms/cm3, andwherein the non-single-crystal oxide semiconductor film has a density of higher than 6.0 g/cm3. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16)
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17. A semiconductor device comprising:
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a first gate electrode layer; a second gate electrode layer over the first gate electrode layer; a gate insulating layer over the second gate electrode layer; a non-single-crystal oxide semiconductor film as a channel formation region over the gate insulating layer; and an insulating layer over the channel formation region, wherein the non-single-crystal oxide semiconductor film comprises at least indium, gallium, and zinc, wherein the non-single-crystal oxide semiconductor film comprises a crystal part, wherein a concentration of chlorine in the non-single-crystal oxide semiconductor film is lower than or equal to 2×
1018 atoms/cm3, andwherein the non-single-crystal oxide semiconductor film has a density of higher than 6.0 g/cm3. - View Dependent Claims (18, 19, 20)
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Specification