Oxide semiconductor film and semiconductor device
First Claim
1. An oxide semiconductor film comprising a crystalline region,wherein the oxide semiconductor film has a first peak of electron diffraction intensity with a full width at half maximum of greater than or equal to 0.2 nm−
- 1 in a region where a magnitude of a scattering vector is greater than or equal to 3.3 nm−
1 and less than or equal to 4.1 nm−
1, andwherein the oxide semiconductor film has a second peak of electron diffraction intensity with a full width at half maximum of greater than or equal to 0.2 nm−
1 in a region where a magnitude of a scattering vector is greater than or equal to 5.5 nm−
1 and less than or equal to 7.1 nm−
1.
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Accused Products
Abstract
An oxide semiconductor film which has more stable electric conductivity is provided. The oxide semiconductor film comprises a crystalline region. The oxide semiconductor film has a first peak of electron diffraction intensity with a full width at half maximum of greater than or equal to 0.4 nm−1 and less than or equal to 0.7 nm−1 in a region where a magnitude of a scattering vector is greater than or equal to 3.3 nm−1 and less than or equal to 4.1 nm−1. The oxide semiconductor film has a second peak of electron diffraction intensity with a full width at half maximum of greater than or equal to 0.45 nm−1 and less than or equal to 1.4 nm−1 in a region where a magnitude of a scattering vector is greater than or equal to 5.5 nm−1 and less than or equal to 7.1 nm−1.
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Citations
14 Claims
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1. An oxide semiconductor film comprising a crystalline region,
wherein the oxide semiconductor film has a first peak of electron diffraction intensity with a full width at half maximum of greater than or equal to 0.2 nm− - 1 in a region where a magnitude of a scattering vector is greater than or equal to 3.3 nm−
1 and less than or equal to 4.1 nm−
1, andwherein the oxide semiconductor film has a second peak of electron diffraction intensity with a full width at half maximum of greater than or equal to 0.2 nm−
1 in a region where a magnitude of a scattering vector is greater than or equal to 5.5 nm−
1 and less than or equal to 7.1 nm−
1. - View Dependent Claims (2, 3, 4, 5, 6, 7)
- 1 in a region where a magnitude of a scattering vector is greater than or equal to 3.3 nm−
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8. An oxide semiconductor film comprising a crystalline region,
wherein the oxide semiconductor film has a first peak of electron diffraction intensity with a full width at half maximum of greater than or equal to 0.4 nm− - 1 in a region where a magnitude of a scattering vector is greater than or equal to 3.3 nm−
1 and less than or equal to 4.1 nm−
1, andwherein the oxide semiconductor film has a second peak of electron diffraction intensity with a full width at half maximum of greater than or equal to 0.45 nm−
1 in a region where a magnitude of a scattering vector is greater than or equal to 5.5 nm−
1 and less than or equal to 7.1 nm−
1. - View Dependent Claims (9, 10, 11, 12, 13, 14)
- 1 in a region where a magnitude of a scattering vector is greater than or equal to 3.3 nm−
Specification