Semiconductor light emitting device and method for manufacturing semiconductor light emitting device
First Claim
Patent Images
1. A method for manufacturing a semiconductor light emitting device, comprising:
- forming a light emitting layer including a nitride semiconductor on an n-type semiconductor layer including a nitride semiconductor;
forming a first film of AlxGa1-xN (0.05≦
x≦
0.2) on the light emitting layer, the first film including Mg;
forming a second film including a nitride semiconductor including Mg on the first film; and
forming a third film including a nitride semiconductor including Mg on the second film,the forming of the first film including alternately and multiply repeating;
a first process of supplying a group V source-material gas, a gas including Ga, a gas including Al, and a gas including Mg; and
a second process of supplying the group V source-material gas without supplying the gas including Ga, the gas including Al, and the gas including Mg,a maximum value of a concentration of Mg in a p-side region including the light emitting layer, the first film, and the second film being not less than 1×
1020 cm−
3 and not more than 3×
1020 cm−
3,an Al concentration in the p-side region having a maximum value at a first position,the Al concentration being 1/100 of the maximum value at a second position arranged with the first position along a first direction from the light emitting layer toward the first film in a region between the first position and a position corresponding to the light emitting layer,a Mg concentration at the second position being not less than 2×
1018 cm −
3 .
2 Assignments
0 Petitions
Accused Products
Abstract
According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, and a light emitting layer. The p-type semiconductor layer includes a first p-side layer, a second p-side layer, and a third p-side layer. A concentration profile of Mg of a p-side region includes a first portion, a second portion, a third portion, a fourth portion, a fifth portion, a sixth portion and a seventh portion. The p-side region includes the light emitting layer, the second p-side layer, and the third p-side layer. A Mg concentration of the sixth portion is not less than 1×1020 cm−3 and not more than 3×1020 cm−3. The Al concentration is 1/100 of the maximum value at a second position. A Mg concentration at the second position is not less than 2×1018 cm−3.
7 Citations
16 Claims
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1. A method for manufacturing a semiconductor light emitting device, comprising:
-
forming a light emitting layer including a nitride semiconductor on an n-type semiconductor layer including a nitride semiconductor; forming a first film of AlxGa1-xN (0.05≦
x≦
0.2) on the light emitting layer, the first film including Mg;forming a second film including a nitride semiconductor including Mg on the first film; and forming a third film including a nitride semiconductor including Mg on the second film, the forming of the first film including alternately and multiply repeating; a first process of supplying a group V source-material gas, a gas including Ga, a gas including Al, and a gas including Mg; and a second process of supplying the group V source-material gas without supplying the gas including Ga, the gas including Al, and the gas including Mg, a maximum value of a concentration of Mg in a p-side region including the light emitting layer, the first film, and the second film being not less than 1×
1020 cm−
3 and not more than 3×
1020 cm−
3,an Al concentration in the p-side region having a maximum value at a first position, the Al concentration being 1/100 of the maximum value at a second position arranged with the first position along a first direction from the light emitting layer toward the first film in a region between the first position and a position corresponding to the light emitting layer, a Mg concentration at the second position being not less than 2×
1018 cm −
3 . - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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Specification
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Current AssigneeSeoul Semiconductor Co., Ltd.
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Original AssigneeKabushiki Kaisha Toshiba (Toshiba Corporation)
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InventorsNago, Hajime, Harada, Yoshiyuki, Kimura, Shigeya, Yoshida, Hisashi, Nunoue, Shinya
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Primary Examiner(s)Park, Kinam
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Application NumberUS14/798,044Publication NumberTime in Patent Office295 DaysField of Search372/45.012, 372/45.01, 372/43.01US Class Current1/1CPC Class CodesH01L 33/0025 comprising only AIIIBV comp...H01L 33/007 comprising nitride compoundsH01L 33/0075 comprising nitride compoundsH01L 33/02 characterised by the semico...H01L 33/06 within the light emitting r...H01L 33/325 characterised by the doping...H01S 5/3013 AIIIBV compoundsH01S 5/305 characterised by the doping...H01S 5/3063 using MgH01S 5/3206 ordering or disordering the...H01S 5/3216 quantum well or superlattic...H01S 5/34333 with a well layer based on ...
