Laser diode device

• US 9,331,453 B2
• Filed: 03/11/2013
• Issued: 05/03/2016
• Est. Priority Date: 04/12/2012
• Status: Active Grant

• Current Assignee: OSRAM OLED GMBH (Ams-Osram AG)
• Original Assignee: Osram Opto Semiconductors GmbH (Ams-Osram AG)
• Inventors: Strau, Uwe, Tautz, Snke, Lell, Alfred, Vierheilig, Clemens
• Primary Examiner(s): NGUYEN, DUNG T
• Application Number:
  US14/373,998
• Publication Number:
  US 20140341247A1
• Time in Patent Office: 1,149 Days
• Field of Search: 372/33, 372/36, 372/43.01
• US Class Current: 1/1
• CPC Class Codes: H01S 2301/176 Specific passivation layers on surfaces other than the emission facet
• CPC Class Codes: H01S 5/02212 Can-type, e.g. TO-CAN housings with emission along or parallel to symmetry axis
• CPC Class Codes: H01S 5/02218 Material of the housings; Filling of the housings
• CPC Class Codes: H01S 5/0237 by soldering
• CPC Class Codes: H01S 5/02461 Structure or details of the laser chip to manipulate the heat flow, e.g. passive layers in the chip with a low heat conductivity
• CPC Class Codes: H01S 5/02469 Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC
• CPC Class Codes: H01S 5/0262 Photo-diodes, e.g. transceiver devices, bidirectional devices H01S5/0265 takes precedence
• CPC Class Codes: H01S 5/32341 blue laser based on GaN or GaP

Abstract

A laser diode device has a housing with a mounting part and a laser diode chip, which is based on a nitride compound semi-conductor material, in the housing on the mounting part. The laser diode chip is mounted directly on the mounting part by means of a solder layer and the solder layer has a thickness of greater than or equal to 3 μm.

Claims

1. A laser diode device comprising:

a housing having a mounting part;

a laser diode chip based on a nitride compound semiconductor material in the housing on the mounting part, the chip having, on a substrate, semiconductor layers with an active layer for generating light and the chip having a radiation coupling-out area with a radiation coupling-out region for emitting the generated light, a rear side area situated opposite the radiation coupling-out area, and side areas connecting the radiation coupling-out area and the rear side area; and

a solder layer, wherein the laser diode chip is mounted directly on the mounting part by means of the solder layer, wherein the solder layer has a thickness of greater than or equal to 3 μ

m, and wherein the housing has a housing part connected to the mounting part, the housing part and the mounting part have a main body composed of copper, and at least the housing part is steel-sheathed.

2. The laser diode device according to claim 1, wherein the substrate is an electrically conductive substrate composed of crystalline (In, Al, Ga)N and the laser diode chip is mounted on the mounting part by means of the solder layer directly with the substrate or with an electrical connection layer of the laser diode chip, the electrical connection layer being arranged on a side of the substrate facing away from the semiconductor layers.

3. The laser diode device according to claim 1, wherein the mounting part has a metal-core circuit board or a main body composed of metal or ceramic.

4. The laser diode device according to claim 1, wherein the housing has a housing cover above the mounting part, the housing cover closing the housing.

5. The laser diode device according to claim 1, wherein the solder layer comprises a soft solder.

6. The laser diode device according to claim 1, wherein the laser diode chip has a strain that endeavors to convexly deform an underside of the laser diode chip facing the mounting part, or that counteracts at least a concave deformation of the underside facing the mounting part.

7. The laser diode device according to claim 1, wherein the laser diode chip has, in an underside facing the mounting part, at least one anchoring element for the solder layer, the at least one anchoring element being formed by a depression or elevation.

8. The laser diode device according to claim 7, wherein the laser diode chip has a plurality of anchoring elements embodied as elevations and/or depressions in the underside.

9. The laser diode device according to claim 7, wherein the laser diode chip has as anchoring element a stepped depression at a chip edge between the underside and the radiation coupling-out area or the rear side area or a side area.

10. The laser diode device according to claim 1, wherein the laser diode chip has a metallization on the side areas.

11. The laser diode device according to claim 1, wherein the laser diode chip has a metallization on the radiation coupling-out area and/or the rear side area.

12. The laser diode device according to claim 11, wherein the metallization is arranged directly on the semiconductor layers between the semiconductor layers and an optical layer on the radiation coupling-out area and/or the rear side area.

13. The laser diode device according to claim 10, wherein the metallization forms outer sides of the laser diode chip and a solder of the solder layer wets the metallization.

14. The laser diode device according to claim 10, wherein the metallization comprises at least one or more metals selected from the group consisting of Au, Ti, Pt, Cr, Pd, Ni, Ag, W and Cu.

15. The laser diode device according to claim 10, wherein the laser diode chip has, on a top side facing away from the mounting part, at least one depression that extends from the rear side area to the radiation coupling-out area and that is covered with a passivation.

16. A laser diode device comprising:

a housing having a mounting part;

a laser diode chip based on a nitride compound semiconductor material in the housing on the mounting part, the chip having, on a substrate, semiconductor layers with an active layer for generating light and the chip having a radiation coupling-out area with a radiation coupling-out region for emitting the generated light, a rear side area situated opposite the radiation coupling-out area, and side areas connecting the radiation coupling-out area and the rear side area; and

a solder layer, wherein the laser diode chip is mounted directly on the mounting part by means of the solder layer, wherein the solder layer has a thickness of greater than or equal to 3 μ

m, and wherein the laser diode chip has a strain that endeavors to convexly deform an underside of the laser diode chip facing the mounting part, or that counteracts at least a concave deformation of the underside facing the mounting part.

17. A laser diode device comprising:

a housing having a mounting part;

a laser diode chip based on a nitride compound semiconductor material in the housing on the mounting part, the chip having, on a substrate, semiconductor layers with an active layer for generating light and the chip having a radiation coupling-out area with a radiation coupling-out region for emitting the generated light, a rear side area situated opposite the radiation coupling-out area, and side areas connecting the radiation coupling-out area and the rear side area; and

a solder layer, wherein the laser diode chip is mounted directly on the mounting part by means of the solder layer, wherein the solder layer has a thickness of greater than or equal to 3 μ

m, and wherein the laser diode chip has, in an underside facing the mounting part, at least one anchoring element for the solder layer, the at least one anchoring element being formed by a depression or elevation.

18. The laser diode device according to claim 17, wherein the laser diode chip has a plurality of anchoring elements embodied as elevations and/or depressions in the underside.

19. The laser diode device according to claim 17, wherein the laser diode chip has as anchoring element a stepped depression at a chip edge between the underside and the radiation coupling-out area or the rear side area or a side area.

20. A laser diode device comprising:

a housing having a mounting part;

a laser diode chip based on a nitride compound semiconductor material in the housing on the mounting part, the chip having, on a substrate, semiconductor layers with an active layer for generating light and the chip having a radiation coupling-out area with a radiation coupling-out region for emitting the generated light, a rear side area situated opposite the radiation coupling-out area, and side areas connecting the radiation coupling-out area and the rear side area; and

a solder layer, wherein the laser diode chip is mounted directly on the mounting part by means of the solder layer, wherein the solder layer has a thickness of greater than or equal to 3 μ

m, wherein the laser diode chip has a metallization on the side areas, and wherein the laser diode chip has, on a top side facing away from the mounting part, at least one depression that extends from the rear side area to the radiation coupling-out area and that is covered with a passivation.