Method for sputter targets for electrolyte films

• US 9,334,557 B2
• Filed: 12/19/2008
• Issued: 05/10/2016
• Est. Priority Date: 12/21/2007
• Status: Active Grant

• Current Assignee: Sapurast Research LLC
• Original Assignee: Sapurast Research LLC
• Inventors: Neudecker, Bernd J., Whitacre, Jay F.
• Primary Examiner(s): BERMAN, JASON
• Application Number:
  US12/339,361
• Publication Number:
  US 20090159433A1
• Time in Patent Office: 2,699 Days
• Field of Search: 204/192.15, 429/322, 429/127, 429/162
• US Class Current: 1/1
• CPC Class Codes: C23C 14/0036 Reactive sputtering
• CPC Class Codes: C23C 14/06 characterised by the coating material C23C14/0021 , C23C14/04 take precedence
• CPC Class Codes: C23C 14/22 characterised by the process of coating
• CPC Class Codes: C23C 14/3407 Cathode assembly for sputtering apparatus, e.g. Target
• CPC Class Codes: C23C 14/3414 Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
• CPC Class Codes: C23C 14/352 using more than one target C23C14/56 takes precedence
• CPC Class Codes: H01M 10/0525 Rocking-chair batteries, i.e. batteries with lithium insertion or intercalation in both electrodes; Lithium-ion batteries
• CPC Class Codes: H01M 10/0562 Solid materials
• CPC Class Codes: H01M 10/058 Construction or manufacture
• CPC Class Codes: H01M 6/188 Processes of manufacture
• CPC Class Codes: H01M 6/40 Printed batteries , e.g. thin film batteries
• CPC Class Codes: Y02E 60/10 Energy storage using batteries
• CPC Class Codes: Y02P 70/50 Manufacturing or production processes characterised by the final manufactured product

Abstract

Alternative sputter target compositions or configurations for thin-film electrolytes are proposed whereby the sputter target materials system possesses sufficient electrical conductivity to allow the use of (pulsed) DC target power for sputter deposition. The electrolyte film materials adopt their required electrically insulating and lithium-ion conductive properties after reactive sputter deposition from the electrically conducting sputter target materials system.

Claims

1. A method of fabricating a lithium-ion thin-film electrolyte, comprising

providing an electronically conductive sputter target with an electronic conductivity of at least 10⁻

8 S/cm at room temperature;

providing a vacuum deposition chamber;

sputtering said electronically conductive sputter target; and

depositing a lithium-ion thin-film electrolyte in a reactive sputter gas atmosphere.

2. The method of claim 1, wherein said thin-film electrolyte comprises lithium phosphorus oxynitride.

3. The method of claim 1, wherein said lithium-ion thin-film electrolyte comprises at least one element selected from the group of:

oxygen, nitrogen, fluorine, chlorine, bromine, iodine, sulfur, selenium, tellurium, phosphorus, arsenic, antimony, bismuth, lead, carbon, hydrogen, silicon, sodium, magnesium, and zirconium.

4. The method of claim 1, wherein said vacuum deposition chamber is not RF compatible.

5. The method of claim 1, wherein said reactive sputter gas atmosphere comprises at least one element selected from the group of:

oxygen, nitrogen, fluorine, chlorine, bromine, iodine, sulfur, selenium, tellurium, phosphorus, arsenic, antimony, bismuth, lead, carbon, hydrogen, silicon, lithium, sodium, magnesium, and zirconium.

6. The method of claim 5, further comprising providing said reactive sputter gas atmosphere with said at least one element provided in the form of a gaseous chemical element under sputter deposition process conditions.

7. The method of claim 5, further comprising providing said reactive sputter gas atmosphere with said at least one element provided in the form of gaseous chemical compound under sputter deposition process conditions.

8. The method of claim 1, wherein said conductive sputter target comprises at least one element selected from the group of:

oxygen, nitrogen, fluorine, chlorine, bromine, iodine, sulfur, selenium, tellurium, phosphorus, arsenic, antimony, bismuth, lead, carbon, hydrogen, silicon, lithium, sodium, magnesium, and zirconium.

9. The method of claim 1, wherein said conductive sputter target comprises at least one material selected from the group of:

lithium phosphide and sub-phosphide (Li_xP for 1≦

x≦

100), lithium nitride and sub-nitride (Li_xN for 3≦

x≦

100), phosphorus oxide and sub-oxide (PO_x for x≦

2.5), phosphorus nitride and sub-nitride (PN_x for x≦

1.7), lithium oxide and sub-oxide (Li_xO for 1≦

x≦

100), and elemental phosphorus.

10. The method of claim 1, further comprising energizing said conductive sputter target with radio frequency (RF) power within the frequency range between 1 MHz and 1 GHz.

11. The method of claim 1, further comprising energizing said conductive sputter target with alternating current (AC) power within the frequency range between 1 Hz and 1 MHz.

12. The method of claim 1, further comprising energizing said conductive sputter target with direct current (DC) power.

13. The method of claim 1, further comprising energizing said conductive sputter target with pulsed direct current (pulsed DC) power.

14. The method of claim 1, further comprising energizing said conductive sputter target with a mixed power consisting of a combination of RF, AC, pulsed DC, and DC.

15. The method of claim 1, wherein said conductive sputter target exhibits an electronic conductivity of more than 10⁻

4 S/cm at room temperature.

16. The method of claim 1, wherein said conductive sputter target exhibits an electronic conductivity of more than 1 S/cm at room temperature.

17. The method of claim 1, further comprising converting said conductive sputter target material into thin-film electrolyte material at the substrate surface.

18. The method of claim 1, further comprising using more than one conductive sputter target to deposit said thin-film electrolyte.

19. The method of claim 1, further comprising providing one or more non-sputter deposition layers onto a growing film area.

20. The method of claim 1, further comprising providing one or more non-sputter deposition layers onto a growing film area in an alternating periodic fashion.

21. The method of claim 19, further comprising providing said non-sputter deposition from a material source that is either electrically conducting or insulating.

22. The method of claim 1, wherein said conductive sputter target comprising a thickness between 0.6 cm and 5 cm.

23. The method of claim 1, wherein said conductive sputter target comprises target tile segments.

24. The method of claim 23, wherein said target tile segments comprises at least one element selected from the group of:

a single-phase material, a multi-phase material, a material composite.

25. The method of claim 23, wherein at least one of said target tile segments is larger than 300 cm².