Gap distributed Bragg reflectors
First Claim
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1. A method of making a device, comprising:
- epitaxially growing a layer stack including one or more reflective layers and one or more interstitial layers, each interstitial layer disposed between two reflective layers; and
forming vias that intersect at least some of the one or more reflective layers and the one or more interstitial layers;
exposing the interstitial layers to an etchant through the vias;
etching the interstitial layers;
detecting a color of the surface of the device, a reflectivity of the device, or both a color of the surface of the device and a reflectivity of the device; and
controlling the etching based on the detected color, the detected reflectivity, or both the detected color and the detected reflectivity.
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Abstract
A device includes one or more reflector components. Each reflector component comprises layer pairs of epitaxially grown reflective layers and layers of a non-epitaxial material, such as air. Vias extend through at least some of the layers of the reflector components. The device may include a light emitting layer.
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Citations
9 Claims
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1. A method of making a device, comprising:
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epitaxially growing a layer stack including one or more reflective layers and one or more interstitial layers, each interstitial layer disposed between two reflective layers; and forming vias that intersect at least some of the one or more reflective layers and the one or more interstitial layers; exposing the interstitial layers to an etchant through the vias; etching the interstitial layers; detecting a color of the surface of the device, a reflectivity of the device, or both a color of the surface of the device and a reflectivity of the device; and controlling the etching based on the detected color, the detected reflectivity, or both the detected color and the detected reflectivity. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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Specification