Semiconductor devices and methods of fabricating the same
First Claim
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1. A semiconductor device, comprising:
- a substrate comprising an active region defined by a device isolation layer;
source/drain regions in the active region;
word lines that extend in a first direction parallel to the active region and that are arranged in a second direction crossing the first direction;
a bit line pattern that extends in the second direction and that crosses over a portion of the active region positioned between the word lines; and
a graphene pattern that covers at least a portion of the bit line pattern.
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Abstract
Semiconductor devices may include a substrate including an active region defined by a device isolation layer, source/drain regions in the active region, word lines extending in a first direction parallel to the active region and being arranged in a second direction crossing the first direction, a bit line pattern extending in the second direction and crossing over a portion of the active region positioned between the word lines, and a graphene pattern covering at least a portion of the bit line pattern.
28 Citations
17 Claims
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1. A semiconductor device, comprising:
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a substrate comprising an active region defined by a device isolation layer; source/drain regions in the active region; word lines that extend in a first direction parallel to the active region and that are arranged in a second direction crossing the first direction; a bit line pattern that extends in the second direction and that crosses over a portion of the active region positioned between the word lines; and a graphene pattern that covers at least a portion of the bit line pattern. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A semiconductor device, comprising:
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a substrate comprising an active region defined by a device isolation layer; a bit line that crosses over a portion of the active region and that comprises; a plurality of bit line patterns that are sequentially stacked on the substrate, wherein at least one bit line pattern of the plurality of bit line patterns comprises a different material than another one of the plurality of bit line patterns; and a graphene pattern that is on one of the plurality of bit line patterns; and an interlayered insulating layer that is on the substrate, on the plurality of bit line patterns, and on the graphene pattern. - View Dependent Claims (14, 15, 16, 17)
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Specification