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Semiconductor devices and methods of fabricating the same

  • US 9,337,149 B2
  • Filed: 04/08/2015
  • Issued: 05/10/2016
  • Est. Priority Date: 07/29/2014
  • Status: Active Grant
First Claim
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1. A semiconductor device, comprising:

  • a substrate comprising an active region defined by a device isolation layer;

    source/drain regions in the active region;

    word lines that extend in a first direction parallel to the active region and that are arranged in a second direction crossing the first direction;

    a bit line pattern that extends in the second direction and that crosses over a portion of the active region positioned between the word lines; and

    a graphene pattern that covers at least a portion of the bit line pattern.

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