Liquid crystal display device and manufacturing method thereof

• US 9,337,218 B2
• Filed: 09/27/2013
• Issued: 05/10/2016
• Est. Priority Date: 05/20/2010
• Status: Expired due to Fees

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Aihara, Yamato, Jintyou, Masami, Sato, Rai, Arakawa, Toru
• Primary Examiner(s): Briggs, Nathanael R
• Application Number:
  US14/038,899
• Publication Number:
  US 20140024154A1
• Time in Patent Office: 956 Days
• Field of Search: 349/113, 349/122, 349/138, 349/187
• US Class Current: 1/1
• CPC Class Codes: G02F 1/133553 Reflecting elements associated to illuminating devices G02F1/133605
• CPC Class Codes: G02F 1/13725 based on guest-host interaction G02F1/13762, G02F1/13737, take precedence
• CPC Class Codes: H01L 27/1262 with a particular formation, treatment or coating of the substrate

Abstract

In the liquid crystal display device in which a guest-host liquid crystal layer is provided between a first substrate having a reflective film which is a pixel electrode layer (also referred to as a first electrode layer) and a second substrate having a common electrode layer (also referred to as a second electrode layer), the reflective film which is a pixel electrode layer is projected into the liquid crystal layer, and a micron-sized first unevenness and a nano-sized second unevenness on the first unevenness are provided.

Claims

1. A manufacturing method of a display device, comprising the steps of:

preparing a substrate;

forming a photosensitive organic resin layer over the substrate, the photosensitive organic resin layer having a first unevenness on a face of the photosensitive organic resin layer;

forming a contact hole in a part of the photosensitive organic resin layer;

performing a plasma treatment on the photosensitive organic resin layer, whereby forming a second unevenness on a face of the first unevenness and a fourth unevenness on a face of the part of the photosensitive organic resin layer; and

forming a reflective pixel electrode layer over the photosensitive organic resin layer, the reflective pixel electrode layer having a third unevenness formed in accordance with the first unevenness, the second unevenness and the fourth unevenness,

wherein a whole size of the first unevenness is greater than that of the second unevenness or the fourth unevenness, and

wherein each of the second unevenness and the fourth unevenness is provided in higher density than the first unevenness.

2. The manufacturing method of a display device according to claim 1, wherein the plasma treatment is performed on the photosensitive organic resin layer under an oxygen gas atmosphere.

3. The manufacturing method of a display device according to claim 1, wherein the first unevenness has a size of greater than or equal to 1.5 μ

m and less than or equal to 20μ

m in a planar direction, and

wherein the second unevenness has a size of greater than or equal to 0.1μ

m and less than or equal to 1 μ

m in the planar direction.

4. The manufacturing method of a display device according to claim 1, wherein the first unevenness has a height of greater than or equal to 0.1μ

m and less than or equal to 20μ

m, and

wherein the second unevenness has a height of greater than or equal to 0.1μ

m and less than or equal to 1 μ

m.

5. The manufacturing method of a display device according to claim 1, wherein the display device is a liquid crystal display device.

6. A manufacturing method of a display device, comprising the steps of:

forming an insulating layer over a transistor;

forming a contact hole in a part of the insulating layer;

performing a plasma treatment on a first unevenness of the insulating layer, so that a plurality of second unevennesses are formed on the first unevenness and a plurality of fourth unevennesses are formed on a face of the part of the insulating layer; and

forming a pixel electrode layer over the insulating layer, the pixel electrode layer electrically connected to one of a source and a drain of the transistor and having a third unevenness formed in accordance with the first unevenness, the second unevennesses and the fourth unevennesses,

wherein a whole size of the first unevenness is greater than that of the second unevenness, and

wherein each of the second unevenness and the fourth unevenness is provided in higher density than the first unevenness.

7. The manufacturing method of a display device according to claim 6, wherein the insulating layer comprises a photosensitive organic resin.

8. The manufacturing method of a display device according to claim 6, wherein the pixel electrode layer is in contact with the insulating layer.

9. The manufacturing method of a display device according to claim 6, wherein the plasma treatment is performed under an oxygen gas atmosphere.

10. The manufacturing method of a display device according to claim 6,

wherein the first unevenness has a size of greater than or equal to 1.5μ

m and less than or equal to 20 μ

m in a planar direction, and

wherein each of the second unevennesses has a size of greater than or equal to 0.1μ

m and less than or equal to 1μ

m in the planar direction.

11. The manufacturing method of a display device according to claim 6, wherein the first unevenness has a height of greater than or equal to 0.1μ

m and less than or equal to 20μ

m, and

wherein each of the second unevennesses has a height of greater than or equal to 0.1μ

m and less than or equal to 1 μ

m.

12. The manufacturing method of a display device according to claim 6, wherein the display device is a liquid crystal display device.