Method and apparatus for image sensor packaging

• US 9,337,235 B2
• Filed: 01/02/2015
• Issued: 05/10/2016
• Est. Priority Date: 02/18/2013
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: Chen, Szu-Ying, Wan, Meng-Hsun, Yaung, Dun-Nian, Chen, Pao-Tung, Liu, Jen-Cheng
• Primary Examiner(s): Nhu, David
• Application Number:
  US14/588,815
• Publication Number:
  US 20150118781A1
• Time in Patent Office: 494 Days
• Field of Search: 438/700, 438/692, 438/680, 438/197, 438/199, 257/E21.006, 257/E21.051, 257/E21.053, 257/E21.17, 257/E21.189, 257/E21.305, 257/E21.352
• US Class Current: 1/1
• CPC Class Codes: H01L 2224/08145 the bodies being stacked
• CPC Class Codes: H01L 2224/80895 between electrically conductive surfaces, e.g. copper-copper direct bonding, surface activated bonding
• CPC Class Codes: H01L 2224/80896 between electrically insulating surfaces, e.g. oxide or nitride layers
• CPC Class Codes: H01L 27/146 Imager structures
• CPC Class Codes: H01L 27/14612 involving a transistor
• CPC Class Codes: H01L 27/1462 Coatings
• CPC Class Codes: H01L 27/14621 Colour filter arrangements
• CPC Class Codes: H01L 27/14627 Microlenses
• CPC Class Codes: H01L 27/14634 Assemblies, i.e. Hybrid structures
• CPC Class Codes: H01L 27/14636 Interconnect structures
• CPC Class Codes: H01L 27/14638 Structures specially adapted for transferring the charges across the imager perpendicular to the imaging plane
• CPC Class Codes: H01L 27/1464 Back illuminated imager structures
• CPC Class Codes: H01L 27/14643 Photodiode arrays; MOS imagers
• CPC Class Codes: H01L 27/14685 Process for coatings or optical elements
• CPC Class Codes: H01L 27/1469 Assemblies, i.e. hybrid integration
• CPC Class Codes: H01L 2924/381 Pitch distance
• CPC Class Codes: H01L 31/18 Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof

Abstract

A backside illuminated image sensor having a photodiode and a first transistor in a sensor region and located in a first substrate, with the first transistor electrically coupled to the photodiode. The image sensor has logic circuits formed in a second substrate. The second substrate is stacked on the first substrate and the logic circuits are coupled to the first transistor through bonding pads, the bonding pads disposed outside of the sensor region.

Claims

1. A method of fabricating an image sensor package, the method comprising:

providing a sensor substrate having a plurality of pixels disposed in a sensor region, the sensor substrate having one or more redistribution layers (RLDs) on a front side of the sensor substrate and a plurality of sensor bond pads in an uppermost RDL, each of the plurality of sensor bond pads disposed outside the sensor region;

providing a control circuit die having a plurality of control circuits and a plurality of control circuit bond pads; and

mounting the control circuit die on a first surface of the RDL, each of the plurality of control circuit bond pads in electrical contact with one of the plurality of sensor bond pads.

2. The method of claim 1, wherein mounting the control circuit die on a first surface of the RDL comprises bonding the control circuit die to the sensor substrate using a bonding process selected from the group consisting of direct bonding, hybrid bonding, thermo-compression bonding, and combinations thereof.

3. The method of claim 1, further comprising forming a homogenous layer between respective ones of the plurality of control circuit bond pads and respective ones of the plurality of sensor bond pads.

4. The method of claim 1, further comprising applying an underfilling or adhesive between the sensor substrate and the control circuit die.

5. The method of claim 1, further comprising after mounting the control circuit die:

thinning a back side of the sensor substrate; and

forming a plurality of lenses on the thinned back side of the sensor substrate.

6. The method of claim 5, further comprising forming an optical coating on the thinned back side of the sensor substrate.

7. The method of claim 5, further comprising forming a color filter layer on the thinned back side of the sensor substrate.

8. The method of claim 1, wherein mounting the control circuit die on a first surface of the RDL includes:

bonding respective ones of the plurality of control circuit bond pads to respective ones of the plurality of sensor bond pads; and

bonding a first dielectric surface of the RDL to a second dielectric surface on the control circuit die.

9. The method of claim 8, wherein the second dielectric surface is a dielectric layer of a second RDL formed on the control circuit die.

10. A method of fabricating an image sensor package, the method comprising:

providing a sensor die having a plurality of backside illuminated pixels disposed within a sensor region, the sensor die having a plurality of sensor bond pads disposed outside the sensor region, each of the plurality of sensor bond pads electrically coupled to one of the backside illuminated pixels and being exposed at a front side of the sensor die;

providing a control circuit die having an electrical circuit therein and a plurality of control circuit bond pads, each of the control circuit bond pads being exposed at a front side of the control circuit die; and

bonding the front side of the sensor die to the front side of the control circuit die such that the sensor bond pads are in electrical contact with the control circuit bond pad.

11. The method of claim 10, wherein bonding the front side of the sensor die to the front side of the control circuit die includes one of (i) bonding the control circuit bond pads to the sensor bond pads, (ii) bonding a first dielectric surface on the sensor die to a second dielectric surface on the control circuit die, and (iii) both (i) and (ii).

12. The method of claim 11, wherein bonding a first dielectric surface on the sensor die to a second dielectric surface on the control circuit die results in a dielectric-to-dielectric bond between the sensor die and the control circuit die or an oxide-to-oxide bond between the sensor die and the control circuit die.

13. The method of claim 10, further comprising stacking the sensor die and the control circuit die and annealing the stacked sensor die and control circuit die in an inert environment.

14. The method of claim 10, further comprising thinning a back side of the sensor die.

15. The method of claim 14, further comprising forming an antireflective coating on the back side of the sensor die after thinning the back side.

16. The method of claim 14, further comprising forming a color filter and a lens on the back side of the sensor die after thinning the back side.

17. A method of fabricating an image sensor package, the method comprising:

providing a first die having a plurality of backside illuminated pixels disposed within a sensor region, the first die further having a plurality of first bond pads exposed at a front side of the first die, wherein the first bond pads are electrically connected to the plurality of backside illuminated pixels by row select lines and output lines, wherein the sensor region is substantially free of metal features exposed at the front side of the first die;

bonding a second die having an electrical circuit disposed therein to the front side of the first die such that the first bond pads are in electrical contact with second bond pads that are exposed at a front side of the second die, wherein the second bond pads are electrically connected to the electrical circuit; and

thinning a backside of the first die opposite the front side of the first die.

18. The method of claim 17, wherein bonding a second die having an electrical circuit disposed therein to the front side of the first die includes bonding respective ones of the first bond pads to respective ones of the second bond pads.

19. The method of claim 17, further comprising forming a first redistribution layer (RDL) on the front side of the first die.

20. The method of claim 19, further comprising forming a second redistribution layer (RDL) on the second die and bonding the first RDL to the second RDL.