Semiconductor device with field plate

• US 9,337,283 B2
• Filed: 09/02/2013
• Issued: 05/10/2016
• Est. Priority Date: 03/22/2013
• Status: Active Grant

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Nishiguchi, Toshifumi
• Primary Examiner(s): Mandala, Victor A
• Assistant Examiner(s): Rundio, Regan J
• Application Number:
  US14/016,181
• Publication Number:
  US 20140284773A1
• Time in Patent Office: 981 Days
• US Class Current: 1/1
• CPC Class Codes: H01L 21/28 Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268 etching for patterning the electrodes H01L21/311, H01L21/3213; multistep manufacturing processes for data storage electrodes H01L29/4011
• CPC Class Codes: H01L 29/402 Field plates
• CPC Class Codes: H01L 29/407 Recessed field plates, e.g. trench field plates, buried field plates
• CPC Class Codes: H01L 29/41 characterised by their shape, relative sizes or dispositions
• CPC Class Codes: H01L 29/4236 within a trench, e.g. trench gate electrode, groove gate electrode
• CPC Class Codes: H01L 29/42368 the thickness being non-uniform
• CPC Class Codes: H01L 29/42376 characterised by the length or the sectional shape
• CPC Class Codes: H01L 29/513 the variation being perpendicular to the channel plane
• CPC Class Codes: H01L 29/66348 with a recessed gate
• CPC Class Codes: H01L 29/66734 with a step of recessing the gate electrode, e.g. to form a trench gate electrode
• CPC Class Codes: H01L 29/7397 and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
• CPC Class Codes: H01L 29/7813 with trench gate electrode, e.g. UMOS transistors trench gate electrodes per se H01L29/4236
• CPC Class Codes: H01L 29/7827 Vertical transistors H01L29/7802, H01L29/78642 take precedence

Abstract

A semiconductor device includes a first semiconductor layer, a second semiconductor layer of a second conductivity type formed on the first semiconductor layer, a first electrode which extends in a first direction and is surrounded by the first semiconductor layer except at one end thereof, and a first insulation film which is formed between the first semiconductor layer and the first electrode. A film thickness of the first insulation film between the other end of the first electrode in a second direction opposite to the first direction and the first semiconductor layer includes a thickness that is greater than a thickness of the first insulation film along a side surface of the first electrode. The semiconductor device also includes a second electrode which faces the second semiconductor layer, and a second insulation film which is formed between the second electrode and the second semiconductor layer.

Claims

1. A semiconductor device comprising:

a first semiconductor layer of a first conductivity type;

a second semiconductor layer of a second conductivity type formed on the first semiconductor layer;

a first electrode extending along a first direction into the first semiconductor layer, the first electrode being surrounded by the first semiconductor layer except at a first end thereof;

a first insulation film between the first semiconductor layer and the first electrode, the first insulation film including a first layer contacting the first semiconductor layer and a second layer containing at least one of phosphorus (P) and boron (B) between the first electrode and the first layer, the first insulation film having an increasing thickness along the first direction from the second semiconductor layer to a second end of the first electrode;

a second electrode contacting a surface of the second layer of the first insulation film, the second electrode being adjacent to the second semiconductor layer in a second direction crossing the first direction;

a second insulation film between the second electrode and the second semiconductor layer and having a thickness that is less than the second thickness of the first insulation film; and

a third insulation film between the first electrode and the second electrode.

2. The semiconductor device according to claim 1, wherein a thickness of the first electrode in the second direction decreases along the first direction between the first end and the second end thereof.

3. The semiconductor device according to claim 2, wherein the second end of the first electrode is a curved surface.

4. The semiconductor device according to claim 1, wherein the second electrode is formed between the first end of the first electrode and the second semiconductor layer, and

a surface area of the second electrode which faces the second semiconductor layer adjacent the second insulation film is greater than a surface area of the second electrode which faces the first electrode adjacent to the third insulation film.

5. A semiconductor device comprising:

a first semiconductor layer of a first conductivity type;

a second semiconductor layer of a second conductivity type formed on the first semiconductor layer;

a first electrode disposed in a trench formed in the first semiconductor layer, the first electrode extending in a first direction toward the second semiconductor layer through a portion of the first semiconductor layer and surrounded by the first semiconductor layer except at a first end thereof; and

a first insulation film formed between the first semiconductor layer and the first electrode, the first insulation film including a first layer in contact with the first semiconductor layer and a second layer containing at least one of phosphorus (P) and boron (B) contained within the trench between the first electrode and the first layer, wherein a film thickness of the first insulation film between a second end of the first electrode and the first semiconductor layer is greater than at thickness between a side surface of the first electrode and the first semiconductor layer and the film thickness of the first insulation film between the side surface of the first electrode and the first semiconductor layer increases along the first direction toward the second end of the first electrode;

a second electrode which is formed on an end of the first insulation film and faces the second semiconductor layer;

a second insulation film which is formed between the second electrode and the second semiconductor layer and has a thickness less than the film thickness of the first insulation film; and

a third insulation film formed between the first electrode and the second electrode.

6. The semiconductor device according to claim 5, wherein the second electrode is formed between the first end of the first electrode and the second semiconductor layer, and

a surface area of the second electrode which faces the second semiconductor layer adjacent the second insulation film is greater than a surface area of the second electrode which faces the first electrode adjacent the third insulation film.

7. The semiconductor device according to claim 5, wherein the first layer is an oxide film formed by thermally oxidizing the first semiconductor layer.

8. The semiconductor device according to claim 5, wherein the first layer is an oxide film or a nitride film.

9. The semiconductor device according to claim 8, wherein the second electrode is formed between the first end of the first electrode and the second semiconductor layer, and

a surface area of the second electrode which faces the second semiconductor layer adjacent the second insulation film is greater than a surface area of the second electrode which faces the first electrode adjacent the third insulation film.

10. A semiconductor device comprising:

a first semiconductor layer of a first conductivity type;

a second semiconductor layer of a second conductivity type formed on the first semiconductor layer;

a first electrode extending toward the second semiconductor layer away from the first semiconductor layer and which is surrounded by the first semiconductor layer except at a first end thereof; and

a first insulation film which is formed between the first semiconductor layer and the first electrode, the first insulation film having a film thickness at a second end of the first electrode that is greater than a thickness of the first insulation film along a side surface thereof as the first insulation film approaches the first end of the first electrode;

a second electrode which is formed on an end of the first insulation film and faces the second semiconductor layer;

a second insulation film which is formed between the second electrode and the second semiconductor layer and has a thickness that is less than the thickness of the first insulation film; and

a third insulation film formed between the first electrode and the second electrode, wherein

the second electrode is formed between the first end of the first electrode and the second semiconductor layer, and

a surface area of the second electrode which faces the second semiconductor layer adjacent the second insulation film is greater than a surface area of the second electrode which faces the first electrode adjacent to the third insulation film.