Semiconductor device having aluminum-containing layer between two curved substrates

• US 9,337,341 B2
• Filed: 03/13/2015
• Issued: 05/10/2016
• Est. Priority Date: 12/28/2001
• Status: Expired due to Term

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei, Murakami, Masakazu, Takayama, Toru, Maruyama, Junya
• Primary Examiner(s): Smoot, Stephen W
• Application Number:
  US14/656,959
• Publication Number:
  US 20150255615A1
• Time in Patent Office: 424 Days
• Field of Search: 257/E33.006, 438/458
• US Class Current: 1/1
• CPC Class Codes: G02F 1/133305 Flexible substrates, e.g. plastics, organic film
• CPC Class Codes: G02F 1/1339 Gaskets; Spacers; Sealing of cells
• CPC Class Codes: G02F 1/13394 spacers regularly patterned on the cell subtrate, e.g. walls, pillars G02F1/133377 takes precedence
• CPC Class Codes: G02F 1/1341 Filling or closing of cells
• CPC Class Codes: G02F 1/1368 in which the switching element is a three-electrode device G02F1/136277 takes precedence
• CPC Class Codes: H01L 21/2007 Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer H01L21/2011 takes precedence; bonding of semiconductor wafers to semiconductor wafers for junction formation H01L21/187
• CPC Class Codes: H01L 21/67092 Apparatus for mechanical treatment or grinding or cutting, see the relevant groups in subclasses B24B or B28D
• CPC Class Codes: H01L 21/6835 using temporarily an auxiliary support
• CPC Class Codes: H01L 21/76251 using bonding techniques
• CPC Class Codes: H01L 2221/6835 used as a support during build up manufacturing of active devices
• CPC Class Codes: H01L 2221/68363 used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 27/1218 with a particular composition or structure of the substrate
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 27/1259 Multistep manufacturing methods
• CPC Class Codes: H01L 27/1262 with a particular formation, treatment or coating of the substrate
• CPC Class Codes: H01L 27/1266 the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
• CPC Class Codes: H01L 27/156 two-dimensional arrays
• CPC Class Codes: H01L 29/66757 Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
• CPC Class Codes: H01L 29/78603 characterised by the insulating substrate or support H01L29/78657 takes precedence
• CPC Class Codes: H01L 2924/30105 : Capacitance
• CPC Class Codes: H01L 2924/3025 : Electromagnetic shielding
• CPC Class Codes: H10K 2102/311 : Flexible OLED
• CPC Class Codes: H10K 59/12 : Active-matrix OLED [AMOLED] displays
• CPC Class Codes: H10K 59/1201 : Manufacture or treatment
• CPC Class Codes: H10K 59/1213 : the pixel elements being TFTs
• CPC Class Codes: H10K 59/123 : Connection of the pixel electrodes to the thin film transistors [TFT]
• CPC Class Codes: H10K 59/131 : Interconnections, e.g. wiring lines or terminals
• CPC Class Codes: H10K 71/00 : Manufacture or treatment specially adapted for the organic devices covered by this subclass
• CPC Class Codes: H10K 71/50 : Forming devices by joining two substrates together, e.g. lamination techniques
• CPC Class Codes: H10K 71/80 : using temporary substrates
• CPC Class Codes: H10K 77/111 : Flexible substrates
• CPC Class Codes: Y02E 10/549 : Organic PV cells

Abstract

The object of the invention is to provide a method for fabricating a semiconductor device having a peeled layer bonded to a base material with curvature. Particularly, the object is to provide a method for fabricating a display with curvature, more specifically, a light emitting device having an OLED bonded to a base material with curvature. An external force is applied to a support originally having curvature and elasticity, and the support is bonded to a peeled layer formed over a substrate. Then, when the substrate is peeled, the support returns into the original shape by the restoring force, and the peeled layer as well is curved along the shape of the support. Finally, a transfer object originally having curvature is bonded to the peeled layer, and then a device with a desired curvature is completed.

Claims

1. A semiconductor device comprising:

a first substrate with curvature;

an adhesive over the first substrate;

an oxide layer over the adhesive;

a layer comprising wiring lines and pixel electrodes over the oxide layer;

a second substrate with curvature over the layer; and

a film including aluminum between the adhesive and the oxide layer.

2. The semiconductor device according to claim 1, wherein the film including the aluminum is an aluminum nitride film or an aluminum nitride oxide film.

3. The semiconductor device according to claim 1, wherein each of the first substrate and the second substrate has an elasticity.

4. The semiconductor device according to claim 1, wherein a curvature radius of each of the first substrate and the second substrate is 50 cm to 200 cm.

5. The semiconductor device according to claim 1, wherein the semiconductor device is flexible.

6. The semiconductor device according to claim 1, wherein the layer further comprises a transistor.

7. The semiconductor device according to claim 1, wherein the layer further comprises a liquid crystal.

8. The semiconductor device according to claim 1, wherein the layer further comprises a light emitting material.

9. A semiconductor device comprising:

a first substrate with curvature;

an adhesive over the first substrate;

an oxide layer over the adhesive;

a layer comprising wiring lines and pixel electrodes over the oxide layer;

a second substrate with curvature over the layer; and

a film having a thermal conductivity between the adhesive and the oxide layer,

wherein the film having the thermal conductivity includes aluminum.

10. The semiconductor device according to claim 9, wherein the film having the thermal conductivity is an aluminum nitride film or an aluminum nitride oxide film.

11. The semiconductor device according to claim 9, wherein each of the first substrate and the second substrate has an elasticity.

12. The semiconductor device according to claim 9, wherein a curvature radius of each of the first substrate and the second substrate is 50 cm to 200 cm.

13. The semiconductor device according to claim 9, wherein the semiconductor device is flexible.

14. The semiconductor device according to claim 9, wherein the layer further comprises a transistor.

15. The semiconductor device according to claim 9, wherein the layer further comprises a liquid crystal.

16. The semiconductor device according to claim 9, wherein the layer further comprises a light emitting material.