×

Semiconductor light emitting device, light emitting device package comprising the same, and lighting device comprising the same

  • US 9,337,391 B2
  • Filed: 03/18/2015
  • Issued: 05/10/2016
  • Est. Priority Date: 08/11/2014
  • Status: Active Grant
First Claim
Patent Images

1. A semiconductor light emitting device, comprising:

  • a first conductivity-type semiconductor layer including an n-type GaN contact layer, an n-type GaN layer disposed on the n-type GaN contact layer, doped with silicon (Si) acting as an n-type dopant in a concentration of 2×

    1018 cm

    3
    to 9×

    1019 cm

    3
    , and having a thickness of 1 nm to 500 nm, and an n-type super-lattice layer disposed on the n-type GaN layer and having a structure in which two or more AlxInyGazN (0≦

    x,y,z≦

    1, x+y+z>

    0) having different compositions are repeatedly stacked;

    a border layer disposed on the first conductivity-type semiconductor layer and having band gap energy decreasing in a direction away from the first conductivity-type semiconductor layer;

    an active layer contacting the border layer and having a multiple quantum well structure in which five or more quantum well layers and four or more quantum barrier layers are alternately stacked; and

    a second conductivity-type semiconductor layer including a p-type AlxInyGazN layer (0≦

    x,y,z≦

    1, x+y+z>

    0) disposed on the active layer and having a composition ratio of aluminum (Al) increased or decreased in a direction away from the active layer, and a p-type GaN layer disposed on the p-type AlxInyGazN layer (0≦

    x,y,z≦

    1, x+y+z>

    0), doped with magnesium (Mg) acting as a p-type dopant in a concentration of 1×

    1018 cm

    3
    to 9×

    1021 cm

    3
    , and having a thickness of 30 nm to 150 nm, the concentration of magnesium being increased or decreased in a thickness direction,wherein at least one of the first conductivity-type semiconductor layer, the border layer, the active layer and the second conductivity-type semiconductor layer has a V-shaped distortion containing layer formed thereon.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×