Semiconductor light emitting device

• US 9,337,396 B2
• Filed: 02/06/2014
• Issued: 05/10/2016
• Est. Priority Date: 02/08/2013
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd. (Samsung Group)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Katsuno, Hiroshi, Mitsugi, Satoshi, Ito, Toshihide, Nunoue, Shinya
• Primary Examiner(s): Chen, Yu
• Application Number:
  US14/173,954
• Publication Number:
  US 20140225141A1
• Time in Patent Office: 824 Days
• US Class Current: 1/1
• CPC Class Codes: H01L 2933/0016 relating to electrodes
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/405 Reflective materials
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector

Abstract

According to one embodiment, a semiconductor light emitting device includes a first metal layer, a second metal layer, a third metal layer, a semiconductor light emitting unit and an insulating unit. The semiconductor light emitting unit is separated from the first metal layer in a first direction. The second metal layer is provided between the first metal layer and the semiconductor light emitting unit to be electrically connected to the first metal layer, and is light-reflective. The second metal layer includes a contact metal portion, and a peripheral metal portion. The third metal layer is light-reflective. The third metal layer includes an inner portion, a middle portion, and an outer portion. The insulating unit includes an first insulating portion, a second insulating portion, and a third insulating portion.

Claims

1. A semiconductor light emitting device, comprising:

a first metal layer;

a semiconductor light emitting unit separated from the first metal layer in a first direction, the semiconductor light emitting unit including;

a first semiconductor layer of a first conductivity type,

a second semiconductor layer provided between a part of the first semiconductor layer and the first metal layer, and

a light emitting layer provided between the part of the first semiconductor layer and the second semiconductor layer;

a second metal layer provided between the first metal layer and the semiconductor light emitting unit to be electrically connected to the first metal layer, the second metal layer being light-reflective, the second metal layer including;

a contact metal portion contacting the second semiconductor layer, and

a peripheral metal portion provided around the contact metal portion when projected onto a plane perpendicular to the first direction, the peripheral metal portion having an outer edge portion separated from the semiconductor light emitting unit;

a third metal layer that is light-reflective, the third metal layer including;

an inner portion provided between the semiconductor light emitting unit and the outer edge portion,

a middle portion overlapping the semiconductor light emitting unit and not overlapping the outer edge portion when projected onto the plane, and

an outer portion outside the semiconductor light emitting unit when projected onto the plane, the middle portion being provided between the inner portion and the outer portion;

an insulating unit including;

a first insulating portion provided between the middle portion and the semiconductor light emitting unit and between the inner portion and the semiconductor light emitting unit,

a second insulating portion provided between the inner portion and the first metal layer and between the outer portion and the first metal layer, and

a third insulating portion continuous with the first insulating portion and the second insulating portion; and

an electrode layer electrically connected to the first semiconductor layer, wherein

the semiconductor light emitting unit has a first surface on a side of the first metal layer and a second surface opposite to the first surface, the second surface having a plurality of protrusions, and

the third metal layer is connected to one of the second metal layer and the electrode layer.

2. The device according to claim 1, wherein the semiconductor light emitting unit is disposed between the electrode layer and the first metal layer.

3. The device according to claim 1, wherein the electrode layer includes at least one selected from aluminum and silver.

4. The device according to claim 1, further comprising:

a pad portion provided to be electrically insulated from the first metal layer on a side of the first metal layer at a surface of the first metal layer opposing the semiconductor light emitting unit;

an interconnect layer electrically insulated from the first metal layer; and

an inter-layer insulating layer,

the electrode layer being electrically insulated from the first metal layer,

the semiconductor light emitting unit including;

the first semiconductor layer of the first conductivity type having a first semiconductor portion and a second semiconductor portion arranged with the first semiconductor portion in a direction parallel to the plane;

the second semiconductor layer provided between the first semiconductor portion and the contact metal portion; and

the light emitting layer provided between the first semiconductor portion and the second semiconductor layer,

the electrode layer being provided between the second semiconductor portion and the first metal layer to be electrically connected to the second semiconductor portion,

the interconnect layer being provided between the first metal layer and the second semiconductor portion to be electrically connected to the electrode layer and the pad portion,

the inter-layer insulating layer including;

a first inter-layer insulation portion provided between the electrode layer and the first metal layer;

a second inter-layer insulation portion provided between the interconnect layer and the first metal layer; and

a third inter-layer insulation portion provided between the pad portion and the first metal layer.

5. The device according to claim 4, wherein a portion of the second metal layer overlaps at least one selected from the electrode layer and the interconnect layer when projected onto the plane.

6. The device according to claim 4, wherein the inter-layer insulating layer further has a fourth inter-layer insulation portion provided between the interconnect layer and the second semiconductor portion.

7. The device according to claim 4, wherein the third metal layer is electrically connected to one selected from the first metal layer and the electrode layer.

8. The device according to claim 4, wherein the electrode layer includes at least one selected from aluminum and silver.

9. The device according to claim 1, wherein the third metal layer includes at least one selected from aluminum and silver.

10. The device according to claim 1, wherein an intensity of light emitted from the semiconductor light emitting unit to be emitted from a surface of the semiconductor light emitting unit on a side of the semiconductor light emitting unit opposite to the first metal layer is higher than an intensity of the light emitted from the semiconductor light emitting unit to be emitted from a surface of the semiconductor light emitting unit on a side of the first metal layer.

11. The device according to claim 1, further comprising a substrate, the substrate being electrically conductive,

wherein the first metal layer is disposed between the substrate and the semiconductor light emitting unit, the substrate and the second metal layer being electrically connected to each other via the first metal layer.

12. The device according to claim 1, wherein

the outer portion is disposed between the first insulating portion and the first metal layer, and

the outer portion is disposed between the first insulating portion and the second insulating portion.

13. The device according to claim 1, wherein an adhesion between the insulating unit and the semiconductor light emitting unit is higher than an adhesion between the third metal layer and the semiconductor light emitting unit.

14. The device according to claim 1, wherein an adhesion between the insulating unit and the first metal layer is higher than an adhesion between the insulating unit and the third metal layer.

15. The device according to claim 1, wherein the insulating unit includes at least one selected from silicon oxide, silicon nitride, and silicon oxynitride.

16. The device according to claim 1, wherein

an optical reflectance of the second metal layer is higher than an optical reflectance of the first metal layer, and

an optical reflectance of the third metal layer is higher than the optical reflectance of the first metal layer.

17. The device according to claim 1, wherein a distance between two adjacent protrusions is not less than a peak wavelength of a light emitted from the semiconductor light emitting unit.

18. The device according to claim 1, wherein the peripheral metal portion physically contacts the second semiconductor layer.

19. The device according to claim 1, wherein a position of the third metal layer in the first direction is between a position of the semiconductor light emitting unit in the first direction and a position of the second insulating portion in the first direction.