Semiconductor light emitting device
First Claim
1. A semiconductor light emitting device, comprising:
- a first metal layer;
a semiconductor light emitting unit separated from the first metal layer in a first direction, the semiconductor light emitting unit including;
a first semiconductor layer of a first conductivity type,a second semiconductor layer provided between a part of the first semiconductor layer and the first metal layer, anda light emitting layer provided between the part of the first semiconductor layer and the second semiconductor layer;
a second metal layer provided between the first metal layer and the semiconductor light emitting unit to be electrically connected to the first metal layer, the second metal layer being light-reflective, the second metal layer including;
a contact metal portion contacting the second semiconductor layer, anda peripheral metal portion provided around the contact metal portion when projected onto a plane perpendicular to the first direction, the peripheral metal portion having an outer edge portion separated from the semiconductor light emitting unit;
a third metal layer that is light-reflective, the third metal layer including;
an inner portion provided between the semiconductor light emitting unit and the outer edge portion,a middle portion overlapping the semiconductor light emitting unit and not overlapping the outer edge portion when projected onto the plane, andan outer portion outside the semiconductor light emitting unit when projected onto the plane, the middle portion being provided between the inner portion and the outer portion;
an insulating unit including;
a first insulating portion provided between the middle portion and the semiconductor light emitting unit and between the inner portion and the semiconductor light emitting unit,a second insulating portion provided between the inner portion and the first metal layer and between the outer portion and the first metal layer, anda third insulating portion continuous with the first insulating portion and the second insulating portion; and
an electrode layer electrically connected to the first semiconductor layer, whereinthe semiconductor light emitting unit has a first surface on a side of the first metal layer and a second surface opposite to the first surface, the second surface having a plurality of protrusions, andthe third metal layer is connected to one of the second metal layer and the electrode layer.
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Accused Products
Abstract
According to one embodiment, a semiconductor light emitting device includes a first metal layer, a second metal layer, a third metal layer, a semiconductor light emitting unit and an insulating unit. The semiconductor light emitting unit is separated from the first metal layer in a first direction. The second metal layer is provided between the first metal layer and the semiconductor light emitting unit to be electrically connected to the first metal layer, and is light-reflective. The second metal layer includes a contact metal portion, and a peripheral metal portion. The third metal layer is light-reflective. The third metal layer includes an inner portion, a middle portion, and an outer portion. The insulating unit includes an first insulating portion, a second insulating portion, and a third insulating portion.
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Citations
19 Claims
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1. A semiconductor light emitting device, comprising:
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a first metal layer; a semiconductor light emitting unit separated from the first metal layer in a first direction, the semiconductor light emitting unit including; a first semiconductor layer of a first conductivity type, a second semiconductor layer provided between a part of the first semiconductor layer and the first metal layer, and a light emitting layer provided between the part of the first semiconductor layer and the second semiconductor layer; a second metal layer provided between the first metal layer and the semiconductor light emitting unit to be electrically connected to the first metal layer, the second metal layer being light-reflective, the second metal layer including; a contact metal portion contacting the second semiconductor layer, and a peripheral metal portion provided around the contact metal portion when projected onto a plane perpendicular to the first direction, the peripheral metal portion having an outer edge portion separated from the semiconductor light emitting unit; a third metal layer that is light-reflective, the third metal layer including; an inner portion provided between the semiconductor light emitting unit and the outer edge portion, a middle portion overlapping the semiconductor light emitting unit and not overlapping the outer edge portion when projected onto the plane, and an outer portion outside the semiconductor light emitting unit when projected onto the plane, the middle portion being provided between the inner portion and the outer portion; an insulating unit including; a first insulating portion provided between the middle portion and the semiconductor light emitting unit and between the inner portion and the semiconductor light emitting unit, a second insulating portion provided between the inner portion and the first metal layer and between the outer portion and the first metal layer, and a third insulating portion continuous with the first insulating portion and the second insulating portion; and an electrode layer electrically connected to the first semiconductor layer, wherein the semiconductor light emitting unit has a first surface on a side of the first metal layer and a second surface opposite to the first surface, the second surface having a plurality of protrusions, and the third metal layer is connected to one of the second metal layer and the electrode layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19)
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Specification