Radiation-emitting semiconductor device

• US 9,337,397 B2
• Filed: 03/02/2011
• Issued: 05/10/2016
• Est. Priority Date: 03/24/2010
• Status: Active Grant

• Current Assignee: OSRAM OLED GMBH (Ams-Osram AG)
• Original Assignee: Osram Opto Semiconductors GmbH (Ams-Osram AG)
• Inventors: Wittmann, Michael
• Primary Examiner(s): Tran, Tran
• Application Number:
  US13/636,048
• Publication Number:
  US 20130099266A1
• Time in Patent Office: 1,896 Days
• Field of Search: 257/98
• US Class Current: 1/1
• CPC Class Codes: H01L 2224/48097 the kinked part being in proximity to the bonding area outside the semiconductor or solid-state body
• CPC Class Codes: H01L 25/0753 the devices being arranged next to each other
• CPC Class Codes: H01L 2933/0041 relating to wavelength conversion elements
• CPC Class Codes: H01L 2933/005 relating to encapsulations
• CPC Class Codes: H01L 2933/0066 relating to arrangements for conducting electric current to or from the semiconductor body
• CPC Class Codes: H01L 33/486 adapted for surface mounting
• CPC Class Codes: H01L 33/50 Wavelength conversion elements
• CPC Class Codes: H01L 33/502 Wavelength conversion materials
• CPC Class Codes: H01L 33/54 having a particular shape
• CPC Class Codes: H01L 33/56 Materials, e.g. epoxy or silicone resin
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

A radiation-emitting semiconductor device includes a chip connection region, a radiation-emitting semiconductor chip, and a light-absorbing material, wherein the radiation-emitting semiconductor chip is fixed to the chip connection region, the chip connection region is covered with the light-absorbing material at selected locations at which said chip connection region is not covered by the radiation-emitting semiconductor chip, and the radiation-emitting semiconductor chip is free of the light-absorbing material in locations.

Claims

1. A radiation-emitting semiconductor device comprising:

a housing body having a chip mounting area;

a chip connection region;

a radiation-emitting semiconductor chip;

a wire connection region;

a wire electrically conductively connecting the wire connection region to the radiation-emitting semiconductor chip; and

a light-absorbing material,

wherein

the chip connection region and the wire connection region are arranged at the chip mounting area,

the radiation-emitting semiconductor chip is fixed to the chip connection region,

the chip connection region is covered with the light-absorbing material at selected locations at which said chip connection region is not covered by the radiation-emitting semiconductor chip,

the wire connection region is covered with the light-absorbing material at selected locations at which it is not covered by the wire,

the radiation-emitting semiconductor chip is free of the light-absorbing material in selected locations,

the chip mounting area is free of the light-absorbing material in selected locations, and

the housing body and the light-absorbing material are the same color.

2. The radiation-emitting semiconductor device according to claim 1, wherein the chip mounting area is formed with the same color as, or in a similar color to, the light absorbing material.

3. The radiation-emitting semiconductor device according to claim 1, further comprising a light-transmissive potting material, wherein

the potting material is substantially free of the light-absorbing material, and

the potting material adjoins the radiation-emitting semiconductor chip and the light-absorbing material in selected locations.

4. The radiation-emitting semiconductor device according to claim 3, wherein the potting material adjoins the chip mounting area in selected locations.

5. The radiation-emitting semiconductor device according to claim 3, wherein the potting material is transparent.

6. The radiation-emitting semiconductor device according to claim 3, wherein the potting material is filled with a phosphor and/or a diffuser.

7. The radiation-emitting semiconductor device according to claim 3, wherein the chip connection region and/or the wire connection region are formed with a metal.

8. The radiation-emitting semiconductor device according to claim 7, wherein the light-absorbing material inhibits migration and/or oxidation and/or corrosion of the metal.

9. The radiation-emitting semiconductor device according to claim 1, wherein the light-absorbing material is applied by a jet process.

10. The radiation-emitting semiconductor device according to claim 1, wherein the light-absorbing material comprises a silicone into which light-absorbing particles are introduced.

11. Display apparatus, wherein at least one pixel of the display apparatus is formed at least partly by a radiation-emitting semiconductor device according to claim 1.

12. A radiation-emitting semiconductor device comprising:

a chip connection region;

a radiation-emitting semiconductor chip;

a housing body having a chip mounting area; and

a light-absorbing material,

wherein

the radiation-emitting semiconductor chip is fixed to the chip connection region,

the chip connection region is covered with the light-absorbing material at locations at which said chip connection region is not covered by the radiation-emitting semiconductor chip,

the radiation-emitting semiconductor chip is free of the light-absorbing material in selected locations,

the chip connection region and/or a wire connection region are arranged at the chip mounting area,

the chip mounting area is free of the light-absorbing material in selected locations, and

the chip mounting area is formed with the same color as, or in a similar color to, the light absorbing material.