Method and system for modifying photoresist using electromagnetic radiation and ion implantation

• US 9,340,877 B2
• Filed: 05/07/2013
• Issued: 05/17/2016
• Est. Priority Date: 10/01/2010
• Status: Active Grant

• Current Assignee: Varian Semiconductor Equipment Associates Incorporated (Applied Materials Incorporated)
• Original Assignee: Varian Semiconductor Equipment Associates Incorporated (Applied Materials Incorporated)
• Inventors: Godet, Ludovic, Martin, Patrick M.
• Primary Examiner(s): Asfaw, Mesfin T
• Application Number:
  US13/888,693
• Publication Number:
  US 20130247824A1
• Time in Patent Office: 1,106 Days
• US Class Current: 1/1
• CPC Class Codes: C23C 16/50 using electric discharges generation and control of plasma in discharge tubes for surface treatment H01J37/32, H01J37/34
• CPC Class Codes: G03F 7/405 Treatment with inorganic or organometallic reagents after imagewise removal
• CPC Class Codes: G03F 7/427 using plasma means only
• CPC Class Codes: G03F 7/7045 Hybrid exposures, i.e. multiple exposures of the same area using different types of exposure apparatus, e.g. combining projection, proximity, direct write, interferometric, UV, x-ray or particle beam
• CPC Class Codes: G03F 7/70875 Temperature, e.g. temperature control of masks or workpieces via control of stage temperature
• CPC Class Codes: H01J 37/32357 Generation remote from the workpiece, e.g. down-stream
• CPC Class Codes: H01J 37/32412 Plasma immersion ion implantation
• CPC Class Codes: H01J 37/32422 Arrangement for selecting ions or species in the plasma
• CPC Class Codes: H01L 21/0273 characterised by the treatment of photoresist layers

Abstract

A method of reducing surface roughness of a resist feature disposed on a substrate includes generating a plasma having a plasma sheath and ions therein. A shape of the boundary between the plasma and plasma sheath is modified using a plasma sheath modifier, so that a portion of the boundary facing the substrate is not parallel to a plane defined by the substrate. During a first exposure, the resist feature is exposed to electromagnetic radiation having a desired wavelength and the ions are accelerated across the boundary having the modified shape toward the resist features over an angular range.

Claims

1. A system for processing resist features disposed on a substrate, comprising:

a plasma source configured to generate a plasma having a plasma sheath; and

a plasma sheath modifier disposed between the plasma and the substrate, the plasma sheath modifier configured to control a shape of a boundary defined between the plasma and the plasma sheath such that a portion of the shape of the boundary is not parallel to a plane defined by the substrate in front of the plasma, the plasma sheath modifier configured to transmit electromagnetic radiation having a desired wavelength range, the electromagnetic radiation being emitted from the plasma, and the plasma sheath modifier disposed directly adjacent the substrate and including an aperture dimensioned to allow direct transmission of ions together with electromagnetic radiation to a first section of the substrate, and simultaneous transmission of only electromagnetic radiation to a second section of the substrate adjacent the first section of the substrate.

2. The plasma processing system of claim 1, wherein the plasma sheath modifier is configured to block an electromagnetic radiation range outside of the desired wavelength range.

3. The plasma processing system of claim 2, wherein the desired wavelength range is a UV wavelength range.

4. The plasma processing system of claim 2, wherein the desired wavelength range is an IR wavelength range.