TPIR apparatus for monitoring tungsten hexafluoride processing to detect gas phase nucleation, and method and system utilizing same
First Claim
1. An apparatus for monitoring and control of a vapor deposition installation wherein a gas mixture containing gas species can cause gas phase nucleation and/or chemical attack under process conditions supportive of such behavior, the monitoring and control apparatus comprising:
- a radiation source arranged to transmit source radiation through a sample of said gas mixture;
a detector arranged to receive output radiation resulting from interaction of the source radiation with the gas mixture sample, and to responsively generate a detector output; and
a processor and control assembly, comprising an algorithmic program for determining incipient occurrence of gas phase nucleation and/or chemical attack, the processor being configured to receive the detector output, algorithmically process same according to the algorithmic program to determine incipient occurrence of said gas phase nucleation and/or chemical attack in the vapor deposition installation, and responsively generate an output to control the vapor deposition installation so as to avoid gas phase nucleation and/or chemical attack therein, and maintain the vapor deposition installation in non-gas phase nucleation and/or non-chemical attack operation throughout vapor deposition in the vapor deposition installation.
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Accused Products
Abstract
Apparatus and method for monitoring a vapor deposition installation in which a gas mixture can undergo gas phase nucleation (GPN) and/or chemically attack the product device, under process conditions supportive of such behavior. The apparatus includes a radiation source arranged to transmit source radiation through a sample of the gas mixture, and a thermopile detector assembly arranged to receive output radiation resulting from interaction of the source radiation with the gas mixture sample, and to responsively generate an output indicative of onset of the gas phase nucleation and/or chemical attack when such onset occurs. Such monitoring apparatus and methodology is useful in tungsten CVD processing to achieve high rate tungsten film growth without GPN or chemical attack.
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Citations
9 Claims
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1. An apparatus for monitoring and control of a vapor deposition installation wherein a gas mixture containing gas species can cause gas phase nucleation and/or chemical attack under process conditions supportive of such behavior, the monitoring and control apparatus comprising:
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a radiation source arranged to transmit source radiation through a sample of said gas mixture; a detector arranged to receive output radiation resulting from interaction of the source radiation with the gas mixture sample, and to responsively generate a detector output; and a processor and control assembly, comprising an algorithmic program for determining incipient occurrence of gas phase nucleation and/or chemical attack, the processor being configured to receive the detector output, algorithmically process same according to the algorithmic program to determine incipient occurrence of said gas phase nucleation and/or chemical attack in the vapor deposition installation, and responsively generate an output to control the vapor deposition installation so as to avoid gas phase nucleation and/or chemical attack therein, and maintain the vapor deposition installation in non-gas phase nucleation and/or non-chemical attack operation throughout vapor deposition in the vapor deposition installation. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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Specification