Method and system for forming a pattern on a reticle using charged particle beam lithography
First Claim
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1. A method for fracturing or mask data preparation for charged particle beam lithography, the method comprising:
- inputting a desired substrate pattern for a substrate; and
determining a plurality of charged particle beam shots that form a reticle pattern on a reticle, wherein the reticle pattern will produce a substrate pattern on the substrate using an optical lithography process, wherein the substrate pattern is within a predetermined tolerance of the desired substrate pattern, andwherein the determining is performed using one or more computing hardware processors.
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Abstract
A method and system for fracturing or mask data preparation is disclosed in which a desired substrate pattern for a substrate is input. A plurality of charged particle beam shots is then determined which will form a reticle pattern on a reticle, where the reticle pattern will produce a substrate pattern on the substrate using an optical lithography process, wherein the substrate pattern is within a predetermined tolerance of the desired substrate pattern. A similar method and a similar system for forming a pattern on a reticle are also disclosed.
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25 Claims
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1. A method for fracturing or mask data preparation for charged particle beam lithography, the method comprising:
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inputting a desired substrate pattern for a substrate; and determining a plurality of charged particle beam shots that form a reticle pattern on a reticle, wherein the reticle pattern will produce a substrate pattern on the substrate using an optical lithography process, wherein the substrate pattern is within a predetermined tolerance of the desired substrate pattern, and wherein the determining is performed using one or more computing hardware processors. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A method for forming a pattern on a reticle using charged particle beam lithography, the method comprising:
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inputting a desired substrate pattern for a substrate; determining a plurality of charged particle beam shots that form a reticle pattern on the reticle, wherein the reticle pattern will produce a substrate pattern on the substrate using an optical lithography process, wherein the substrate pattern is within a predetermined tolerance of the desired substrate pattern; and forming the reticle pattern with the plurality of charged particle beam shots. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19, 20)
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21. A system for forming a pattern on a reticle using charged particle beam lithography, the system comprising:
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a means for inputting a desired substrate pattern for a substrate; a means for determining a plurality of charged particle beam shots that form a reticle pattern on the reticle, wherein the reticle pattern will produce a substrate pattern on the substrate using an optical lithography process, wherein the substrate pattern is within a predetermined tolerance of the desired substrate pattern; and a means for forming the reticle pattern on the reticle with the plurality of charged particle beam shots. - View Dependent Claims (22, 23, 24, 25)
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Specification