Apparatus and method for high voltage I/O electro-static discharge protection
First Claim
1. An electronics chip, the chip comprising:
- a charge pump, the charge pump configured to provide a predetermined voltage across a microphone, the charge pump being implemented in a low voltage CMOS process;
at least one high voltage (HV) electro-static discharge (ESD) module coupled to the output of the charge pump, the HV ESD module configured to provide ESD protection for the charge pump and a microelectromechanical system (MEMS) microphone that is coupled to the chip;
wherein the at least one HV ESD module includes a plurality of PMOS or NMOS transistors wherein selected ones of the PMOS or NMOS transistors include a first PWELL region, a high voltage NWELL region, and a second PWELL region, and the first PWELL region is separated from the high voltage NWELL region by a distance L that completely separates the first PWELL region from the high voltage NWELL region, the distance L being effective increase the breakdown voltage of a NWELL to substrate junction and to allow a low voltage process to be used to construct the chip and still allow the HV ESD module to provide ESD protection for the chip;
a filter;
wherein the at least one high voltage (HV) electro-static discharge (ESD) module is coupled between the charge pump and the filter, and wherein the output of the filter is coupled to a microphone transducer.
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Accused Products
Abstract
An electronics chip includes a charge pump and at least one high voltage (HV) electro-static discharge (ESD) module. The charge pump is configured to provide a predetermined voltage across a microphone. The devices described herein are implemented in a standard low voltage CMOS process and has a circuit topology that provides an inherent ESD protection level (when it is powered down), which is higher than the operational (predetermined) DC level. At least one high voltage (HV) electro-static discharge (ESD) module is coupled to the output of the charge pump. The HV ESD module is configured to provide ESD protection for the charge pump and a microelectromechanical system (MEMS) microphone that is coupled to the chip. The at least one HV ESD module includes a plurality of PMOS or NMOS transistors having at least one high voltage NWELL/DNWELL region formed within selected ones of the PMOS or NMOS transistors. The at least one high voltage NWELL/DNWELL region has a breakdown voltage sufficient to allow a low voltage process to be used to construct the chip and still allow the HV ESD module to provide ESD protection for the chip.
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Citations
10 Claims
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1. An electronics chip, the chip comprising:
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a charge pump, the charge pump configured to provide a predetermined voltage across a microphone, the charge pump being implemented in a low voltage CMOS process; at least one high voltage (HV) electro-static discharge (ESD) module coupled to the output of the charge pump, the HV ESD module configured to provide ESD protection for the charge pump and a microelectromechanical system (MEMS) microphone that is coupled to the chip; wherein the at least one HV ESD module includes a plurality of PMOS or NMOS transistors wherein selected ones of the PMOS or NMOS transistors include a first PWELL region, a high voltage NWELL region, and a second PWELL region, and the first PWELL region is separated from the high voltage NWELL region by a distance L that completely separates the first PWELL region from the high voltage NWELL region, the distance L being effective increase the breakdown voltage of a NWELL to substrate junction and to allow a low voltage process to be used to construct the chip and still allow the HV ESD module to provide ESD protection for the chip; a filter; wherein the at least one high voltage (HV) electro-static discharge (ESD) module is coupled between the charge pump and the filter, and wherein the output of the filter is coupled to a microphone transducer. - View Dependent Claims (2, 3, 4, 5)
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6. An electronics chip, the chip comprising:
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a charge pump, the charge pump configured to provide a predetermined voltage across a microphone, the charge pump being implemented in a low voltage CMOS process; at least one high voltage (HV) electro-static discharge (ESD) module coupled to the output of the charge pump, the HV ESD module configured to provide ESD protection for the charge pump and a microelectromechanical system (MEMS) microphone that is coupled to the chip; wherein the at least one HV ESD module includes a plurality of PMOS or NMOS transistors having at least one high voltage NWELL/DNWELL region formed within selected ones of the PMOS or NMOS transistors, the at least one high voltage NWELL/DNWELL region having a breakdown voltage sufficient to allow a low voltage process to be used to construct the chip and still allow the HV ESD module to provide ESD protection for the chip; a filter; wherein the at least one high voltage (HV) electro-static discharge (ESD) module is coupled between the charge pump and the filter, and wherein the output of the filter is coupled to a microphone transducer. - View Dependent Claims (7, 8, 9, 10)
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Specification