Semiconductor device and fabrication method thereof
First Claim
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1. A semiconductor device comprising:
- a first substrate;
a second substrate facing to the first substrate;
a shading film comprising Ti, Cr, or Al over the second substrate, the shading film being located between the first substrate and the second substrate;
a first transistor over the first substrate;
a second transistor over the first substrate;
a first spacer overlapping with a semiconductor layer of the first transistor;
a second spacer a size of which is different with a size of the first spacer;
the second spacer overlapping with a semiconductor layer of the second transistor;
wherein the first spacer and the second spacer comprise a same resin.
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Abstract
A p channel TFT of a driving circuit has a single drain structure and its n channel TFT, an LDD structure. A pixel TFT has the LDD structure. A pixel electrode disposed in a pixel unit is connected to the pixel TFT through a hole bored in at least a protective insulation film formed of an inorganic insulating material and formed above a gate electrode of the pixel TFT, and in an inter-layer insulation film disposed on the insulation film in close contact therewith. These process steps use 6 to 8 photo-masks.
202 Citations
19 Claims
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1. A semiconductor device comprising:
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a first substrate; a second substrate facing to the first substrate; a shading film comprising Ti, Cr, or Al over the second substrate, the shading film being located between the first substrate and the second substrate; a first transistor over the first substrate; a second transistor over the first substrate; a first spacer overlapping with a semiconductor layer of the first transistor; a second spacer a size of which is different with a size of the first spacer;
the second spacer overlapping with a semiconductor layer of the second transistor;wherein the first spacer and the second spacer comprise a same resin. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A semiconductor device comprising:
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a first substrate; a second substrate facing to the first substrate; a shading film comprising Ti, Cr, or Al, the shading film being located between the first substrate and the second substrate; a first transistor over the first substrate; a second transistor over the first substrate; an insulating layer over the first transistor and the second transistor;
the insulating layer include a contact hole;a source or drain lead wire over the insulating layer, the source or drain lead wire electrically connected to a source or drain region of the first transistor through the contact hole; a first spacer overlapping with a semiconductor layer of the first transistor; and a second spacer a size of which is different with a size of the first spacer;
the second spacer overlapping with a semiconductor layer of the second transistor in the contact hole. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 18, 19)
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Specification