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Semiconductor device and fabrication method thereof

  • US 9,343,570 B2
  • Filed: 10/09/2014
  • Issued: 05/17/2016
  • Est. Priority Date: 07/06/1999
  • Status: Expired due to Term
First Claim
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1. A semiconductor device comprising:

  • a first substrate;

    a second substrate facing to the first substrate;

    a shading film comprising Ti, Cr, or Al over the second substrate, the shading film being located between the first substrate and the second substrate;

    a first transistor over the first substrate;

    a second transistor over the first substrate;

    a first spacer overlapping with a semiconductor layer of the first transistor;

    a second spacer a size of which is different with a size of the first spacer;

    the second spacer overlapping with a semiconductor layer of the second transistor;

    wherein the first spacer and the second spacer comprise a same resin.

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