Semiconductor device and method for manufacturing the same
First Claim
1. A semiconductor device comprising:
- a first material film comprising Ga2O3, over a substrate;
an oxide semiconductor film comprising indium on the first material film;
a gate insulating layer adjacent to the oxide semiconductor film; and
a gate electrode layer adjacent to the oxide semiconductor film with the gate insulating layer therebetween;
wherein the oxide semiconductor film is thicker than the first material film.
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Abstract
An object is to provide a semiconductor device including an oxide semiconductor film, which has stable electrical characteristics and high reliability. A stack of first and second material films is formed by forming the first material film (a film having a hexagonal crystal structure) having a thickness of 1 nm to 10 nm over an insulating surface and forming the second material film having a hexagonal crystal structure (a crystalline oxide semiconductor film) using the first material film as a nucleus. As the first material film, a material film having a wurtzite crystal structure (e.g., gallium nitride or aluminum nitride) or a material film having a corundum crystal structure (α-Al2O3, α-Ga2O3, In2O3, Ti2O3, V2O3, Cr2O3, or α-Fe2O3) is used.
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Citations
17 Claims
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1. A semiconductor device comprising:
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a first material film comprising Ga2O3, over a substrate; an oxide semiconductor film comprising indium on the first material film; a gate insulating layer adjacent to the oxide semiconductor film; and a gate electrode layer adjacent to the oxide semiconductor film with the gate insulating layer therebetween; wherein the oxide semiconductor film is thicker than the first material film. - View Dependent Claims (2, 3, 4, 15)
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5. A semiconductor device comprising:
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a first material film comprising Ga2O3, over a substrate; an oxide semiconductor film comprising indium on the first material film; a gate insulating layer over the oxide semiconductor film; and a gate electrode layer over the oxide semiconductor film with the gate insulating layer therebetween; wherein the oxide semiconductor film is thicker than the first material film. - View Dependent Claims (6, 7, 8, 9, 16)
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10. A semiconductor device comprising:
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a gate electrode; a gate insulating film over the gate electrode; a first material film comprising Ga2O3, over the gate electrode with the gate insulating film interposed therebetween; an oxide semiconductor film comprising indium on the first material film, wherein the oxide semiconductor film overlaps with the gate electrode; and a source electrode layer and a drain electrode layer in electrical contact with the oxide semiconductor film, wherein the oxide semiconductor film is thicker than the first material film. - View Dependent Claims (11, 12, 13, 14, 17)
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Specification