Nitride semiconductor light emitting device and fabrication method thereof
First Claim
1. A method of fabricating a nitride semiconductor light emitting device, the method comprising:
- forming a first buffer layer above a substrate;
recrystallizing the first buffer layer at a temperature higher than a growth temperature of the first buffer layer;
forming a second buffer layer containing indium above the first buffer layer;
forming a third buffer layer containing indium and configured to directly contact the second buffer layer;
forming an indium-doped GaN layer above the third buffer layer;
forming a first nitride semiconductor layer configured to directly contact the indium-doped GaN layer;
forming an active layer above the first nitride semiconductor layer; and
forming a second nitride semiconductor layer above the active layer;
wherein the first nitride semiconductor layer is disposed between the indium-doped GaN layer and the active layer, andwherein the second buffer layer has a growth temperature between the growth temperature of the first buffer layer and the temperature of the recrystallizing of the first buffer layer.
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Abstract
Provided is a nitride semiconductor light emitting device including: a substrate; a first buffer layer formed above the substrate; an indium-containing second buffer layer formed above the first buffer layer; an indium-containing third buffer layer formed above the second buffer layer; a first nitride semiconductor layer formed above the third buffer layer; an active layer formed above the first nitride semiconductor layer; and a second nitride semiconductor layer formed above the active layer. According to the present invention, the crystal defects are further suppressed, so that the crystallinity of the active layer is enhanced, and the optical power and the operation reliability are enhanced.
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Citations
20 Claims
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1. A method of fabricating a nitride semiconductor light emitting device, the method comprising:
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forming a first buffer layer above a substrate; recrystallizing the first buffer layer at a temperature higher than a growth temperature of the first buffer layer; forming a second buffer layer containing indium above the first buffer layer; forming a third buffer layer containing indium and configured to directly contact the second buffer layer; forming an indium-doped GaN layer above the third buffer layer; forming a first nitride semiconductor layer configured to directly contact the indium-doped GaN layer; forming an active layer above the first nitride semiconductor layer; and forming a second nitride semiconductor layer above the active layer; wherein the first nitride semiconductor layer is disposed between the indium-doped GaN layer and the active layer, and wherein the second buffer layer has a growth temperature between the growth temperature of the first buffer layer and the temperature of the recrystallizing of the first buffer layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. A method of fabricating a nitride semiconductor light emitting device, the method comprising:
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forming a first buffer layer above a substrate; recrystallizing the first buffer layer at a temperature higher than a growth temperature of the first buffer layer; forming a second buffer layer containing indium above the first buffer layer, wherein the first buffer layer and the second buffer layer each has substantially the same tensile strain as the substrate; forming a third buffer layer containing indium and configured to directly contact the second buffer layer; forming an indium-doped GaN layer above the third buffer layer; forming a first nitride semiconductor layer configured to directly contact the indium-doped GaN layer; forming an active layer above the first nitride semiconductor layer; and forming a second nitride semiconductor layer above the active layer, wherein the second buffer layer has a growth temperature between the growth temperature of the first buffer layer and the temperature of the recrystallizing of the first buffer layer. - View Dependent Claims (16, 17, 18, 19, 20)
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Specification