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Light emitting device and method of manufacturing the same

  • US 9,343,624 B2
  • Filed: 11/24/2014
  • Issued: 05/17/2016
  • Est. Priority Date: 03/07/2006
  • Status: Active Grant
First Claim
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1. A light emitting device, comprising:

  • a conductive support layer;

    a reflective layer disposed on the conductive support layer;

    a nitride semiconductor layer disposed on the reflective layer, wherein the nitride semiconductor layer includes a second-type semiconductor layer on the reflective layer, an active layer on the second-type semiconductor layer, and a first-type semiconductor layer on the active layer;

    a light extraction structure disposed on the first-type semiconductor layer; and

    a first-type electrode disposed next to the light extraction structure.

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