Light emitting device, light emitting device package and lighting system including the same

• US 9,343,640 B2
• Filed: 11/06/2014
• Issued: 05/17/2016
• Est. Priority Date: 05/04/2009
• Status: Active Grant

• Current Assignee: Suzhou Lekin Semiconductor Company Limited
• Original Assignee: LG Innotek Company Limited (LG Corporation)
• Inventors: Hwang, Sung Min, Song, Hyun Don, Cho, Hyun Kyong
• Primary Examiner(s): Diaz, Jose R
• Application Number:
  US14/535,122
• Publication Number:
  US 20150060927A1
• Time in Patent Office: 558 Days
• US Class Current: 1/1
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/12032 Schottky diode
• CPC Class Codes: H01L 2933/0016 relating to electrodes
• CPC Class Codes: H01L 33/0033 having Schottky barriers
• CPC Class Codes: H01L 33/145 with a current-blocking structure
• CPC Class Codes: H01L 33/40 Materials therefor
• CPC Class Codes: H01L 33/405 Reflective materials
• CPC Class Codes: H01L 33/42 Transparent materials
• CPC Class Codes: H01L 33/48 characterised by the semiconductor body packages
• CPC Class Codes: H01L 33/60 Reflective elements
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

A light emitting device is described, including a second conductive type semiconductor layer; an active layer over the second conductive type semiconductor layer; a first conductive type semiconductor layer over the active layer; a second electrode in a first region under the second conductive type semiconductor layer; a current blocking layer including a metal; and a first electrode over the first conductive type semiconductor layer. Further, the first electrode has at least one portion that vertically overlaps the current blocking layer.

Claims

1. A light emitting device, comprising:

a metal layer;

an adhesive layer on the metal layer;

a light emitting structure on the adhesive layer;

at least one first electrode on the light emitting structure;

a reflective layer between the adhesive layer and the light emitting structure;

a contact layer between the adhesive layer and the light emitting structure; and

a schottky contact layer between at least one area of the adhesive layer and the light emitting structure,

wherein the adhesive layer has a protrusion portion, and

wherein the protrusion portion vertically overlaps with the schottky contact layer.

2. The light emitting device of claim 1, wherein a material of the schottky contact layer is different from a material of the reflective layer.

3. The light emitting device of claim 1, wherein the schottky contact layer vertically overlaps with at least one portion of the at least one first electrode.

4. The light emitting device of claim 1, wherein the at least one first electrode does not vertically overlap with at least one portion of the contact layer.

5. The light emitting device of claim 1, wherein a material of the contact layer is different from a material of the reflective layer.

6. The light emitting device of claim 1, wherein the adhesive layer has a protrusion portion, and

wherein the protrusion portion vertically overlaps with both the schottky contact layer and the at least one first electrode.

7. The light emitting device of claim 1, wherein a thickness of the contact layer is thinner than that of the reflective layer.

8. The light emitting device of claim 1, wherein the light emitting structure comprises a first region and a second region,

wherein the metal layer and the reflective layer are disposed under the light emitting structure at the first region of the light emitting structure, and

wherein the schottky contact layer is disposed under the light emitting structure only at the second region of the light emitting structure.

9. The light emitting device of claim 1, wherein the schottky contact layer does not overlap with the reflective layer.

10. The light emitting device of claim 1, wherein a top surface of the schottky contact layer is flush with a top surface of the reflective layer.

11. The light emitting device of claim 1, wherein both of the reflective layer and the schottky contact layer are directly in contact with the light emitting structure.

12. The light emitting device of claim 1, wherein a conductivity of the schottky contact layer is less than that of the reflective layer.