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Facet on a gallium and nitrogen containing laser diode

  • US 9,343,871 B1
  • Filed: 03/25/2013
  • Issued: 05/17/2016
  • Est. Priority Date: 04/05/2012
  • Status: Active Grant
First Claim
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1. A gallium and nitrogen containing laser device, the device comprising:

  • a gallium and nitrogen containing surface having either a nonpolar orientation or a semipolar orientation;

    a cladding region overlying the gallium and nitrogen containing surface, the cladding region having an AlN mol fraction of less than about 2%;

    a cavity region overlying the gallium and nitrogen containing surface and configured in alignment in substantially a c-direction or a projection of the c-direction, the cavity region being characterized by a first end and a second end;

    the first end comprising a first etched facet;

    the second end comprising a second etched facet wherein the first etched facet and the second etched facet are at an angle of between 87 degrees and 93 degrees from the gallium and nitrogen containing surface, and the first etched facet and the second etched facet have a root mean square roughness of 50 nm or less;

    a first optical coating overlying the first etched facet, wherein the first optical coating is configured to increase a reflectivity of the first etched facet to a laser beam generated in the cavity region, the first optical coating comprising a first layer of SiO2 and a second layer of tantalum pentoxide;

    wherein the first layer of SiO2 directly contacts the entire first etched facet, and the second layer of tantalum pentoxide covers the entire first layer; and

    a second optical coating overlying the second etched facet, wherein the second optical coating is configured to reduce a reflectivity of the second etched facet to the laser beam generated in the cavity region, the second optical coating comprising a first layer of SiO2 and a second layer of Al2O3, wherein the first layer of SiO2 directly contacts the entire second etched facet and is configured as a passivation layer, and the second layer of Al2O3 covers the entire first layer and is configured to reduce the reflectivity of the second etched facet, the second optical coating having a substantially uniform thickness across the second etched facet.

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