X-ray pixels including double photoconductors and X-ray detectors including the X-ray pixels
First Claim
Patent Images
1. A pixel of an X-ray detector, the pixel comprising:
- a first photoconductor configured to generate electron-hole pairs in response to X-rays incident on the first photoconductor;
a first electrical circuit configured to detect at least one electron or hole generated by the first photoconductor and convert the electron or hole into a first electrical signal, the first electrical circuit including a first transistor;
a second photoconductor on the first photoconductor, the second photoconductor configured to generate electron-hole pairs in response to X-rays transmitted through the first photoconductor;
a second electrical circuit configured to detect at least one electron or hole generated by the second photoconductor and convert the electron or hole into a second electrical signal, the second electrical circuit including a second transistor;
X-ray blocking lavers below the first transistor and the second transistor and respectively corresponding to the first transistor and the second transistor;
a first common electrode and a first pixel electrode respectively on opposite surfaces of the first photoconductor; and
a second common electrode and a second pixel electrode respectively on opposite surfaces of the second photoconductor;
wherein the X-rays incident on the first photoconductor are of a lower energy band compared to the X-rays incident on the second photoconductor,wherein the first photoconductor and the second photoconductor are formed of different material from each other, andwherein the first electrical circuit is electrically connected to the first pixel electrode.
1 Assignment
0 Petitions
Accused Products
Abstract
Example embodiments are directed to X-ray detectors including double photoconductors. According to example embodiments, the X-ray detector includes a first photoconductor on which X-rays are incident, and a second photoconductor on which X-rays transmitted through the first photoconductor are incident. The first photoconductor and the second photoconductor include a tandem structure. The first photoconductor is formed of silicon and absorbs X-rays in a low energy band, and the second photoconductor is formed of a material that absorbs X-rays in an energy band higher than the low energy band of the X-rays absorbed by silicon.
-
Citations
15 Claims
-
1. A pixel of an X-ray detector, the pixel comprising:
-
a first photoconductor configured to generate electron-hole pairs in response to X-rays incident on the first photoconductor; a first electrical circuit configured to detect at least one electron or hole generated by the first photoconductor and convert the electron or hole into a first electrical signal, the first electrical circuit including a first transistor; a second photoconductor on the first photoconductor, the second photoconductor configured to generate electron-hole pairs in response to X-rays transmitted through the first photoconductor; a second electrical circuit configured to detect at least one electron or hole generated by the second photoconductor and convert the electron or hole into a second electrical signal, the second electrical circuit including a second transistor; X-ray blocking lavers below the first transistor and the second transistor and respectively corresponding to the first transistor and the second transistor; a first common electrode and a first pixel electrode respectively on opposite surfaces of the first photoconductor; and a second common electrode and a second pixel electrode respectively on opposite surfaces of the second photoconductor; wherein the X-rays incident on the first photoconductor are of a lower energy band compared to the X-rays incident on the second photoconductor, wherein the first photoconductor and the second photoconductor are formed of different material from each other, and wherein the first electrical circuit is electrically connected to the first pixel electrode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
-
-
14. A pixel of an X-ray detector, the pixel comprising:
-
a first photoconductor configured to generate electron-hole pairs in response to X-rays incident on the first photoconductor; a first electrical circuit on the first photoconductor configured to detect at least one electron or hole generated by the first photoconductor and convert the electron or hole into a first electrical signal, the first electrical circuit including a first transistor; a second photoconductor on the first photoconductor, the second photoconductor configured to generate electron-hole pairs in response to X-rays transmitted through the first photoconductor; a second electrical circuit on the first photoconductor configured to detect at least one electron or hole generated by the second photoconductor and convert the electron or hole into a second electrical signal, the second electrical circuit including a second transistor; X-ray blocking layers below the first transistor and the second transistor and respectively corresponding to the first transistor and the second transistor, a first common electrode and a first pixel electrode respectively on opposite surfaces of the first photoconductor; and a second common electrode and a second pixel electrode respectively on opposite surfaces of the second photoconductor; wherein the X-rays incident on the first photoconductor are of a lower energy band compared to the X-rays incident on the second photoconductor, wherein the first photoconductor and the second photoconductor are formed of different material from each other, wherein the first electrical circuit is electrically connected to the first pixel electrode, and wherein the first and second electrical circuits are between the first and second photoconductors, or wherein the first and second electrical circuits are on the first and second photoconductors.
-
-
15. A pixel of an X-ray detector, the pixel comprising:
-
a first photoconductor configured to generate electron-hole pairs in response to X-rays incident on the first photoconductor; a first electrical circuit on the first photoconductor configured to detect at least one electron or hole generated by the first photoconductor and convert the electron or hole into a first electrical signal, the first electronic circuit including a first transistor; a second photoconductor on the first electrical circuit, the second photoconductor configured to generate electron-hole pairs in response to X-rays transmitted through the first photoconductor; a second electrical circuit configured to detect at least one electron or hole generated by the second photoconductor and convert the electron or hole into a second electrical signal, the second electrical circuit including a second transistor; X-ray blocking layers below the first transistor and the second transistor and respectively corresponding to the first transistor and the second transistor a first common electrode and a first pixel electrode respectively on opposite surfaces of the first photoconductor; and a second common electrode and a second pixel electrode respectively on opposite surfaces of the second photoconductor; wherein the X-rays incident on the first photoconductor are of a lower energy band compared to the X-rays incident on the second photoconductor, wherein the first photoconductor and the second photoconductor are formed of different material from each other, and wherein the first electrical circuit is electrically connected to the first pixel electrode.
-
Specification