Method for manufacturing light emitting device and light emitting device

• US 9,349,664 B2
• Filed: 07/31/2015
• Issued: 05/24/2016
• Est. Priority Date: 11/09/2012
• Status: Active Grant

• Current Assignee: Nichia Corporation
• Original Assignee: Nichia Corporation
• Inventors: Kitajima, Tadayuki, Ishida, Masashi, Sato, Daisuke
• Primary Examiner(s): Rodela, Eduardo A
• Application Number:
  US14/815,742
• Publication Number:
  US 20150340577A1
• Time in Patent Office: 298 Days
• US Class Current: 1/1
• CPC Class Codes: H01L 2224/16225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/73253 Bump and layer connectors
• CPC Class Codes: H01L 23/28 Encapsulations, e.g. encapsulating layers, coatings, e.g. for protectionH01L23/552 takes precedence; insulating layers for contacts or interconnections H01L23/5329
• CPC Class Codes: H01L 23/31 characterised by the arrangement or shape
• CPC Class Codes: H01L 23/3135 Double encapsulation or coating and encapsulation
• CPC Class Codes: H01L 24/97 the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
• CPC Class Codes: H01L 25/0753 the devices being arranged next to each other
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/01322 Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
• CPC Class Codes: H01L 2924/12035 Zener diode
• CPC Class Codes: H01L 2924/12041 LED
• CPC Class Codes: H01L 33/48 characterised by the semiconductor body packages
• CPC Class Codes: H01L 33/483 Containers
• CPC Class Codes: H01L 33/502 Wavelength conversion materials
• CPC Class Codes: H01L 33/505 characterised by the shape, e.g. plate or foil
• CPC Class Codes: H01L 33/52 Encapsulations
• CPC Class Codes: H01L 33/54 having a particular shape
• CPC Class Codes: H01L 33/56 Materials, e.g. epoxy or silicone resin
• CPC Class Codes: H01L 33/60 Reflective elements

Abstract

A manufacturing method of a light emitting device includes a light emitting element disposed over a substrate and a reflective resin disposed along the side surface of the light emitting element. The method includes disposing light emitting elements in a matrix over an aggregate substrate, and disposing a semiconductor element between the adjacent light emitting elements in one direction of column and row directions of the light emitting elements in the matrix. A reflective resin is disposed to cover the semiconductor elements along the side surfaces of the light emitting elements and the side surfaces of the phosphor layers. The reflective resin and the substrate disposed in between the adjacent light emitting elements is cut in the column or row direction and between the light emitting element and the adjacent semiconductor element in the other direction, to include a light emitting element or a semiconductor element.

Claims

1. A light emitting device, comprising:

a light emitting element disposed over a substrate;

a phosphor layer disposed over the light emitting element;

a semiconductor element disposed adjacent to the light emitting element; and

a reflective resin disposed along side surfaces of the light emitting element and the phosphor layer to cover the semiconductor element,

wherein a corner formed by a side surface of the reflective resin on the semiconductor element side and an upper surface of the reflective resin forms an acute angle in a vertical cross-sectional view including the light emitting element and the semiconductor element,

wherein another corner formed by a side surface of the reflective resin on the light emitting element side and the upper surface of the reflective resin forms an obtuse angle in the cross-sectional view.

2. The light emitting device according to claim 1, wherein a deepest part of a recessed portion formed at the upper surface of the reflective resin is formed directly above the semiconductor element.

3. The light emitting device according to claim 2, wherein the deepest part of the recessed portion formed at the upper surface of the reflective resin is formed directly above a center of the upper surface of the semiconductor element.