Front side copper post joint structure for temporary bond in TSV application
First Claim
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1. A method of forming an integrated circuit structure, the method comprising:
- providing a substrate, the substrate having one or more metallization layers thereon and one or more conductive vias extending into the substrate;
forming one or more passivation layers over the one or more metallization layers;
forming a post-passivation interconnect (PPI) over the one or more passivation layers, the PPI comprising a conductive pad;
forming a dielectric buffer layer over at least a portion of the conductive pad;
forming an under-bump-metallurgy (UBM) directly coupled to the conductive pad, the UBM extending over at least a portion of the dielectric buffer layer;
forming a conductive pillar over the UBM;
forming one or more conductive materials over the conductive pillar; and
attaching the substrate to a carrier substrate using an adhesive, the adhesive contacting a sidewall of the conductive pillar and extending between the conductive pillar and an adjacent conductive pillar.
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Abstract
A method of forming an integrated circuit structure is provided. The method includes providing a substrate, the substrate having a conductive pad thereon. A dielectric buffer layer is formed over at least a portion of the conductive pad, and an under-bump-metallurgy (UBM) is formed directly coupled to the conductive pad, wherein the UBM extends over at least a portion of the dielectric buffer layer. Thereafter, a conductive pillar is formed over the UBM, and one or more conductive materials are formed over the conductive pillar. The substrate may be attached to a carrier substrate using an adhesive.
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Citations
20 Claims
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1. A method of forming an integrated circuit structure, the method comprising:
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providing a substrate, the substrate having one or more metallization layers thereon and one or more conductive vias extending into the substrate; forming one or more passivation layers over the one or more metallization layers; forming a post-passivation interconnect (PPI) over the one or more passivation layers, the PPI comprising a conductive pad; forming a dielectric buffer layer over at least a portion of the conductive pad; forming an under-bump-metallurgy (UBM) directly coupled to the conductive pad, the UBM extending over at least a portion of the dielectric buffer layer; forming a conductive pillar over the UBM; forming one or more conductive materials over the conductive pillar; and attaching the substrate to a carrier substrate using an adhesive, the adhesive contacting a sidewall of the conductive pillar and extending between the conductive pillar and an adjacent conductive pillar. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method of forming an integrated circuit structure comprising:
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providing a substrate, the substrate having a post-passivation interconnect (PPI) formed thereon; forming a conductive pillar in electrical contact with the PPI; forming one or more conductive materials over the conductive pillar, a combined height of the conductive pillar and the one or more conductive materials being between about 25 μ
m and about 60 μ
m;forming an adhesive extending along a sidewall of the conductive pillar; and attaching the substrate to a carrier wafer using the adhesive, the conductive pillar and the adhesive being interposed between the substrate and the carrier wafer. - View Dependent Claims (10, 11, 12, 13, 20)
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14. A method of forming an integrated circuit structure comprising:
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providing a substrate, the substrate having a plurality of conductive pillars formed thereon and one or more conductive materials over each of the conductive pillars, the plurality of conductive pillars comprising a first conductive pillar and a second conductive pillar; and attaching the substrate to a carrier substrate using an adhesive, the adhesive filling a gap between the substrate and the carrier substrate, the adhesive being interposed between and extending along sidewalls of the first conductive pillar and the second conductive pillar. - View Dependent Claims (15, 16, 17, 18, 19)
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Specification