×

Solid-state imaging device

  • US 9,349,766 B2
  • Filed: 08/07/2014
  • Issued: 05/24/2016
  • Est. Priority Date: 03/04/2014
  • Status: Active Grant
First Claim
Patent Images

1. A solid-state imaging device comprising:

  • a semiconductor layer in which a plurality of photoelectric conversion elements that photoelectrically convert incident light are provided;

    an organic photoelectric conversion layer that is provided on a light receiving surface of the semiconductor layer, that absorbs and photoelectrically converts light of a predetermined wavelength region, and that transmits light of a wavelength region except for the predetermined wavelength region;

    microlenses that are provided at positions facing the light receiving surfaces of the plurality of photoelectric conversion elements with the organic photoelectric conversion layer interposed therebetween, and that concentrate incident light on the photoelectric conversion elements;

    a first transparent electrode that is provided on a light receiving surface of the organic photoelectric conversion layer;

    a plurality of second transparent electrodes that is provided on a surface of the organic photoelectric conversion layer opposite to the light receiving surface,wherein the organic photoelectric conversion layer and the first transparent electrode are provided so as to cover a region including the light receiving surfaces of the plurality of photoelectric conversion elements,the second transparent electrodes are provided so that a part of a projection region, which is formed by projecting an image of the second transparent electrode on the semiconductor layer, covers a part of the light receiving surface of the adjacent photoelectric conversion element;

    storage diodes that are provided in the semiconductor layer on a surface of the semiconductor layer opposite to the light receiving surface and hold charges collected by the second transparent electrodes;

    contact plugs that are embedded in the semiconductor layer, that connect the second transparent electrodes to the storage diodes, and that discharge the charges to the storage diodes from the second transparent electrodes;

    floating diffusions that are provided in the semiconductor layer on a surface of the semiconductor layer opposite to the light receiving surface and that accumulate the charges transferred from the storage diodes; and

    readout gates that are provided on a surface of the semiconductor layer opposite to the light receiving surface and that transfer the charges to the floating diffusions from the storage diodes.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×