Semiconductor structure with airgap
First Claim
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1. A method, comprising:
- forming an amorphous layer at a predetermined depth of a substrate;
forming an airgap in the substrate under the amorphous layer; and
forming a completely isolated transistor in an active region of the substrate, above the amorphous layer and the airgap.
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Abstract
A field effect transistor (FET) with an underlying airgap and methods of manufacture are disclosed. The method includes forming an amorphous layer at a predetermined depth of a substrate. The method further includes forming an airgap in the substrate under the amorphous layer. The method further includes forming a completely isolated transistor in an active region of the substrate, above the amorphous layer and the airgap.
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Citations
16 Claims
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1. A method, comprising:
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forming an amorphous layer at a predetermined depth of a substrate; forming an airgap in the substrate under the amorphous layer; and forming a completely isolated transistor in an active region of the substrate, above the amorphous layer and the airgap. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A method, comprising:
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forming at least one deep trench structure in a bulk substrate, on sides of an active region; forming sidewall structures on sidewalls of the at least one deep trench structure, which acts as an etch stop layer; forming a lateral undercut in the bulk substrate starting at a bottom of the at least one deep trench structure; and filling the at least one deep trench structure with material to form an airgap from the lateral undercut in the bulk substrate under the active region, wherein the lateral undercut is formed by etching with XeF2.
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13. A structure, comprising:
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an amorphous layer under an active region of a substrate; an airgap in the substrate under the amorphous layer; and a completely isolated transistor in the active region, above the amorphous layer and the airgap and surrounded by shallow trench isolation regions. - View Dependent Claims (14, 15, 16)
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Specification