Aspect ratio trapping and lattice engineering for III/V semiconductors
First Claim
Patent Images
1. A method comprising:
- forming a silicon-germanium (SiGe) layer on a semiconductor-on-insulator (SOI) layer, the SOI layer is on an insulator layer;
oxidizing the SiGe layer using a Ge-condensation process, such that germanium atoms are displaced from the SiGe layer into the SOI layer and the SiGe layer becomes an oxidized semiconductor layer, the SOI layer having the displaced germanium atoms is a strained SiGe layer;
removing the oxidized semiconductor layer from above the strained SiGe layer;
forming first trenches through a hardmask and into the strained SiGe layer, the hardmask is directly on the strained SiGe layer, edges of the strained SiGe layer are exposed by the first trenches, the edges of the strained SiGe layer are relaxed;
forming barrier layers in the first trenches;
forming a second trench by removing the hardmask; and
growing a III/V semiconductor layer in the second trench, the III/V semiconductor layer is grown on the strained SiGe layer having relaxed edges.
1 Assignment
0 Petitions
Accused Products
Abstract
A method of forming a semiconductor structure. The method may include; forming a hardmask on a strained semiconductor, the strained semiconductor is on a substrate; relaxing edges of the strained semiconductor by forming first trenches through the hardmask and through the strained semiconductor; forming barrier layers in the first trenches; forming a second trench between adjacent barrier layers; and growing a second semiconductor layer on the strained semiconductor having relaxed edges.
27 Citations
16 Claims
-
1. A method comprising:
-
forming a silicon-germanium (SiGe) layer on a semiconductor-on-insulator (SOI) layer, the SOI layer is on an insulator layer; oxidizing the SiGe layer using a Ge-condensation process, such that germanium atoms are displaced from the SiGe layer into the SOI layer and the SiGe layer becomes an oxidized semiconductor layer, the SOI layer having the displaced germanium atoms is a strained SiGe layer; removing the oxidized semiconductor layer from above the strained SiGe layer; forming first trenches through a hardmask and into the strained SiGe layer, the hardmask is directly on the strained SiGe layer, edges of the strained SiGe layer are exposed by the first trenches, the edges of the strained SiGe layer are relaxed; forming barrier layers in the first trenches; forming a second trench by removing the hardmask; and growing a III/V semiconductor layer in the second trench, the III/V semiconductor layer is grown on the strained SiGe layer having relaxed edges. - View Dependent Claims (2, 3, 4, 5, 6, 7)
-
-
8. A method comprising:
-
forming a hardmask on a strained semiconductor, the strained semiconductor is on a substrate; relaxing edges of the strained semiconductor by forming first trenches through the hardmask and through the strained semiconductor; forming barrier layers in the first trenches; forming a second trench between adjacent barrier layers; and growing a second semiconductor layer on the strained semiconductor having relaxed edges. - View Dependent Claims (9, 10, 11, 12, 13, 14, 15, 16)
-
Specification