Semiconductor device including first interface and second interface as an upper surface of a convex protruded from first interface and manufacturing device thereof
First Claim
1. A semiconductor device, comprising:
- a substrate;
a first n-type semiconductor layer that is located above the substrate and includes a first interface and a second interface, wherein the first interface is extended along the substrate and the second interface forms an upper surface of a convex protruded from the first interface;
a p-type semiconductor layer that is stacked on the first n-type semiconductor layer and includes a first region stacked on the first interface and a second region stacked on the second interface, wherein the first region is uniformly continuous with the second region;
a second n-type semiconductor layer that is stacked on the p-type semiconductor layer;
a trench that is depressed from the second n-type semiconductor layer through the p-type semiconductor layer into the convex of the first n-type semiconductor layer; and
an insulating film disposed on an upper surface of the second n-type semiconductor layer and a bottom surface of the trench.
1 Assignment
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Accused Products
Abstract
A semiconductor device includes a first n-type semiconductor layer, a p-type semiconductor layer, a second n-type semiconductor layer and a trench. The first n-type semiconductor layer includes a first interface and a second interface. The second interface forms an upper surface of a convex protruded from the first interface. The p-type semiconductor layer is stacked on the first n-type semiconductor layer and includes a first region stacked on the first interface and a second region stacked on the second interface. The first region is uniformly continuous with the second region. The second n-type semiconductor layer is stacked on the p-type semiconductor layer. The trench is depressed from the second n-type semiconductor layer through the p-type semiconductor layer into the convex of the first n-type semiconductor layer.
13 Citations
18 Claims
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1. A semiconductor device, comprising:
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a substrate; a first n-type semiconductor layer that is located above the substrate and includes a first interface and a second interface, wherein the first interface is extended along the substrate and the second interface forms an upper surface of a convex protruded from the first interface; a p-type semiconductor layer that is stacked on the first n-type semiconductor layer and includes a first region stacked on the first interface and a second region stacked on the second interface, wherein the first region is uniformly continuous with the second region; a second n-type semiconductor layer that is stacked on the p-type semiconductor layer; a trench that is depressed from the second n-type semiconductor layer through the p-type semiconductor layer into the convex of the first n-type semiconductor layer; and an insulating film disposed on an upper surface of the second n-type semiconductor layer and a bottom surface of the trench. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
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18. A semiconductor device, comprising:
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a substrate; a first n-type semiconductor layer that is located above the substrate and includes a first interface and a second interface, wherein the first interface is extended along the substrate and the second interface forms an upper surface of a convex protruded from the first interface; a p-type semiconductor layer that is stacked on the first n-type semiconductor layer and includes a first region stacked on the first interface and a second region stacked on the second interface, wherein the first region is uniformly continuous with the second region; a second n-type semiconductor layer that is stacked on the p-type semiconductor layer; and a trench that is depressed from the second n-type semiconductor layer through the p-type semiconductor layer into the convex of the first n-type semiconductor layer, wherein the p-type semiconductor layer includes a first projection that is protruded along the convex toward a protruding direction in which the convex is protruded, and wherein the second n-type semiconductor layer includes a second projection protruded along the first projection toward the protruding direction.
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Specification