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Semiconductor device and method for manufacturing the same

  • US 9,349,869 B2
  • Filed: 10/23/2013
  • Issued: 05/24/2016
  • Est. Priority Date: 10/24/2012
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising a transistor, the semiconductor device comprising:

  • a gate electrode over a substrate;

    a gate insulating film over the gate electrode;

    a multilayer film over the gate insulating film;

    a pair of electrodes in electrical contact with the multilayer film;

    a first oxide insulating film over the gate insulating film, the multilayer film, and the pair of electrodes; and

    a second oxide insulating film over the first oxide insulating film,wherein the multilayer film includes an oxide semiconductor film and an oxide film,wherein the first oxide insulating film is an oxide insulating film through which oxygen is permeated,wherein the second oxide insulating film is an oxide insulating film containing more oxygen than that in a stoichiometric composition,wherein a threshold voltage of the transistor changes in a negative direction or a positive direction, and an amount of change is less than or equal to 1.0 V,wherein each of the oxide semiconductor film and the oxide film is In-M-Zn oxide,wherein the M represents Al, Ti, Ga, Y, Zr, La, Ce, Nd, or Hf, andwherein a proportion of M atoms in the oxide film is higher than a proportion of M atoms in the oxide semiconductor film.

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