Light emitting device and light emitting device package

• US 9,349,914 B2
• Filed: 03/15/2013
• Issued: 05/24/2016
• Est. Priority Date: 08/06/2012
• Status: Active Grant

• Current Assignee: Suzhou Lekin Semiconductor Company Limited
• Original Assignee: LG Innotek Company Limited (LG Corporation)
• Inventors: Hwang, Jung Hyun, Kwon, Oh Min, Won, Jong Hak
• Primary Examiner(s): Cao, Phat X
• Assistant Examiner(s): Hoque, Mohammad M
• Application Number:
  US13/837,688
• Publication Number:
  US 20140034902A1
• Time in Patent Office: 1,166 Days
• Field of Search: 257/13
• US Class Current: 1/1
• CPC Class Codes: H01L 33/06 within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• CPC Class Codes: H01L 33/14 with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure

Abstract

Disclosed are a light emitting device and a light emitting device package. The light emitting device includes a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer. The active layer includes (T+1) barrier layers, T well layers between the (T+1) barrier layers, and a first dummy layer between N well layers adjacent to the second conductive semiconductor layer and N barrier layers adjacent to the N well layers, in which T>N≧1.

Claims

1. A light emitting device comprising:

a first conductive semiconductor layer;

an active layer on the first conductive semiconductor layer; and

a second conductive semiconductor layer on the active layer,

wherein the active layer comprises;

(T+1) barrier layers;

T well layers between the (T+1) barrier layers; and

a first dummy layer between N well layers adjacent to the second conductive semiconductor layer and N barrier layers adjacent to the N well layers, in which T>

N≧

1,

wherein the first conductive semiconductor layer comprises an n-type semiconductor layer,

wherein the second conductive semiconductor layer comprises a p-type semiconductor layer,

wherein the active layer comprises a last well layer most adjacent to the p-type semiconductor layer among well layers,

wherein the active layer comprises a last barrier layer most adjacent to the p-type semiconductor layer among barrier layers,

wherein the first dummy layer is disposed between the last well layer and the p-type semiconductor layer,

wherein the first dummy layer has a bandgap less than a bandgap of the last barrier layer,

wherein the active layer comprises a third barrier layer most adjacent to the last barrier layer,

wherein the active layer comprises a second dummy layer between the last well layer and the third barrier layer,

wherein the last well layer is disposed between the first dummy layer and the second dummy layer,

wherein the active layer comprises a third dummy layer between a first barrier layer in contact with the n-type semiconductor layer and a first well layer provided between the first barrier layer and a second barrier layer,

wherein the third dummy layer is spaced apart from the first dummy layer, and

wherein a thickness of the third dummy layer is less than a thickness of the first dummy layer.

2. The light emitting device of claim 1, wherein each of the first and third dummy layers has a thickness in a range of about 2 nm to about 4 nm.

3. The light emitting device of claim 1, wherein the first dummy layer is disposed on one of a top surface and a bottom surface of the second barrier layer contacting the first well layer.

4. The light emitting device of claim 2, wherein the first dummy layer or the third dummy layer has a bandgap between a bandgap of the first well layer and a bandgap of the first barrier layer.

5. The light emitting device of claim 2, wherein the first dummy layer or the third dummy layer includes the same compound semiconductor material as a compound semiconductor material of the first barrier layer.

6. The light emitting device of claim 1, wherein the (T+1) barrier layers have equal thicknesses.

7. The light emitting device of claim 1, wherein the active layer generates a light having a peak wavelength of 450 nm or more.

12. The light emitting device of claim 1,

wherein a thickness of the first dummy layer is less than a thickness of the last barrier layer.

13. The light emitting device of claim 1, wherein the fourth barrier layer is most adjacent to the p-type semiconductor layer among first to fourth barrier layers, and

wherein a thickness of the first dummy layer is less than a thickness of the fourth barrier layer.

14. The light emitting device of claim 1, wherein the second dummy layer has a bandgap less than the bandgap of the last barrier layer.

15. The light emitting device of claim 1, wherein the active layer further comprises a second well layer between the first well layer and the last well layer, and

wherein the second well layer does not have a dummy layer.

8. A light emitting device comprising:

a substrate;

a first conductive semiconductor layer on the substrate;

an active layer on the first conductive semiconductor layer; and

a second conductive semiconductor layer on the active layer,

wherein the first conductive semiconductor layer comprises an n-type semiconductor layer,

wherein the second conductive semiconductor layer comprises a p-type semiconductor layer,

wherein the active layer comprises;

first to fourth barrier layers; and

first to third well layers between the first to fourth barrier layers, and

wherein the third well layer is most adjacent to the p-type semiconductor layer among the first to third well layers, and

wherein the first barrier layer contacts the first conductive semiconductor layer, the fourth barrier layer contacts the second conductive semiconductor layer, and the third and fourth barrier layers have thicknesses greater than thicknesses of the first and second barrier layers, respectively,

wherein the fourth barrier layer is a last barrier layer most adjacent to the p-type semiconductor layer among barrier layers,

wherein the active layer comprises a first dummy layer disposed between the third well layer most adjacent to the p-type semiconductor layer and the p-type semiconductor layer,

wherein the first dummy layer has a bandgap less than a bandgap of the last barrier layer,

wherein the third barrier is most adjacent to the last barrier layer,

wherein the active layer comprises a second dummy layer between the third well layer and the third barrier layer, and

wherein the third well layer is disposed between the first dummy layer and the second dummy layer,

wherein the active layer comprises a third dummy layer between a first barrier layer in contact with the first conductive semiconductor layer and a first well layer provided between the first barrier layer and the second barrier layer,

wherein the third dummy layer is spaced apart from the first dummy layer, and

wherein a thickness of the third dummy layer is less than a thickness of the first dummy layer.

9. The light emitting device of claim 8, wherein the thickness of each of the first and second barrier layers is about 5 nm, and the thickness of each of the third and fourth barrier layers is about 7 nm.

10. The light emitting device of claim 8, wherein the thickness of each of the first and second barrier layers is about 6 nm, and the thickness of each of the third and fourth barrier layers is about 7 nm.

11. The light emitting device of claim 8, wherein the first conductive semiconductor layer is an N type semiconductor layer, and the second conductive semiconductor layer is a P type semiconductor layer.

16. The light emitting device of claim 8, wherein a maximum bandgap energy of the first dummy layer is less than a bandgap energy of the last barrier layer.