Ring gate transistor design for flash memory
First Claim
1. A memory device, comprising:
- A ring gate cell, the ring gate cell comprising a semiconductor body having a first conductivity type, a first terminal in the semiconductor body having a second conductivity type, a channel region having the first conductivity type surrounding the first terminal, and a second terminal in the semiconductor body having the second conductivity type surrounding the channel region;
a connector in contact with the first terminal;
memory material over the channel region;
a control gate surrounding the first terminal and over the memory material; and
a conductive line surrounding the control gate and in contact with the second terminal.
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Accused Products
Abstract
A memory device includes a semiconductor body having a first conductivity type, a first terminal in the semiconductor body having a second conductivity type, a channel region having the first conductivity type surrounding the first terminal, and a second terminal having the second conductivity type surrounding the channel region. A connector is in contact with the first terminal, and can be connected to a bit line in an overlying patterned conductor layer. Memory material is disposed over the channel region, and can include a dielectric charge storage structure. A control gate surrounds the first terminal and is disposed over the memory material. A conductive line surrounds the control gate and is in contact with the second terminal. The control gate and the conductive line can be ring shaped.
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Citations
26 Claims
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1. A memory device, comprising:
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A ring gate cell, the ring gate cell comprising a semiconductor body having a first conductivity type, a first terminal in the semiconductor body having a second conductivity type, a channel region having the first conductivity type surrounding the first terminal, and a second terminal in the semiconductor body having the second conductivity type surrounding the channel region; a connector in contact with the first terminal; memory material over the channel region; a control gate surrounding the first terminal and over the memory material; and a conductive line surrounding the control gate and in contact with the second terminal. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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17. A memory device, comprising:
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a ring gate NAND cell, the ring gate NAND cell comprising a semiconductor body having a first conductivity type, a first terminal in the semiconductor body having a second conductivity type, and a second terminal in the semiconductor body having the second conductivity type; a connector in contact with the first terminal; a plurality of concentric gates surrounding the first terminal and over the semiconductor body, including at least an inner concentric gate surrounding the first terminal, a plurality of intermediate concentric gates surrounding the inner concentric gate, and an outer concentric gate surrounding the plurality of intermediate concentric gates; memory material between the plurality of intermediate concentric gates and the semiconductor body, and a gate dielectric layer between the inner concentric gate and the semiconductor body and between the outer concentric gate ring and the semiconductor body; and a conductive line surrounding the plurality of concentric gates and in contact with the second terminal. - View Dependent Claims (18, 19, 20, 21, 22, 23, 24, 25, 26)
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Specification