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Ring gate transistor design for flash memory

  • US 9,356,105 B1
  • Filed: 12/29/2014
  • Issued: 05/31/2016
  • Est. Priority Date: 12/29/2014
  • Status: Active Grant
First Claim
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1. A memory device, comprising:

  • A ring gate cell, the ring gate cell comprising a semiconductor body having a first conductivity type, a first terminal in the semiconductor body having a second conductivity type, a channel region having the first conductivity type surrounding the first terminal, and a second terminal in the semiconductor body having the second conductivity type surrounding the channel region;

    a connector in contact with the first terminal;

    memory material over the channel region;

    a control gate surrounding the first terminal and over the memory material; and

    a conductive line surrounding the control gate and in contact with the second terminal.

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