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Integrating Schottky diode into power MOSFET

  • US 9,356,132 B2
  • Filed: 06/27/2014
  • Issued: 05/31/2016
  • Est. Priority Date: 05/02/2011
  • Status: Active Grant
First Claim
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1. A semiconductor device, comprising:

  • a) a first and second trenches on a substrate that define a mesa of a first conductivity type having a first width between the first and second trenches;

    b) an insulated source electrode formed in the first and second trenches;

    c) a dielectric region formed in at least a portion of the first and second trenches insulating the insulated source electrode from the mesa, wherein a portion of the dielectric region fills a top portion of the first and second trenches;

    d) a dielectric layer formed on a top surface of the mesa having a contact opening through the dielectric layer; and

    e) a surface source electrode electrically connected to the insulated source electrode overlaying the dielectric layer and filling the contact opening forming a Schottky junction at an interface with the mesa.

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