Semiconductor device having peripheral trench structures
First Claim
1. A semiconductor device, comprising:
- a semiconductor body, having a first surface;
a gate electrode structure, which comprises polycrystalline silicon, of an insulated gate field effect transistor (IGFET) in a first trench extending from the first surface into the semiconductor body; and
a semiconductor element, which is electrically isolated from the gate electrode structure of the IGFET and comprises polycrystalline silicon, in a second trench extending from the first surface into the semiconductor body,wherein the polycrystalline silicon of the IGFET and the polycrystalline silicon of the semiconductor element both end below a top side of an insulation layer, wherein the insulation layer adjoins the first surface of the semiconductor body, andwherein the first trench extends via a boundary of an active cell array into an edge termination structure of the IGFET.
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Accused Products
Abstract
The disclosure relates to a semiconductor device including a semiconductor body, having a first surface, a gate electrode structure, which includes polycrystalline silicon, of an IGFET in a first trench extending from the first surface into the semiconductor body. The device also includes a semiconductor element, which is different from the gate electrode structure of the IGFET and includes polycrystalline silicon, in a second trench extending from the first surface into the semiconductor body, wherein the polycrystalline silicon of the IGFET and of the semiconductor element different therefrom ends below a top side of an insulation layer adjoining the first surface of the semiconductor body.
39 Citations
17 Claims
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1. A semiconductor device, comprising:
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a semiconductor body, having a first surface; a gate electrode structure, which comprises polycrystalline silicon, of an insulated gate field effect transistor (IGFET) in a first trench extending from the first surface into the semiconductor body; and a semiconductor element, which is electrically isolated from the gate electrode structure of the IGFET and comprises polycrystalline silicon, in a second trench extending from the first surface into the semiconductor body, wherein the polycrystalline silicon of the IGFET and the polycrystalline silicon of the semiconductor element both end below a top side of an insulation layer, wherein the insulation layer adjoins the first surface of the semiconductor body, and wherein the first trench extends via a boundary of an active cell array into an edge termination structure of the IGFET. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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17. A semiconductor device, comprising:
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a semiconductor body, having a first surface; a gate electrode structure, which comprises polycrystalline silicon, of an insulated gate field effect transistor (IGFET) in a first trench extending from the first surface into the semiconductor body; and a semiconductor element, which is electrically isolated from the gate electrode structure of the IGFET and comprises polycrystalline silicon, in a second trench extending from the first surface into the semiconductor body, wherein the polycrystalline silicon of the IGFET and of the semiconductor element different therefrom ends below a top side of an insulation layer adjoining the first surface of the semiconductor body, wherein the semiconductor element comprises a diode, a resistor, a capacitor, a sensor structure, a zap structure or an edge termination structure of the IGFET.
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Specification