Solid-state light-emitting element, light-emitting device, and lighting device

• US 9,356,209 B2
• Filed: 10/03/2014
• Issued: 05/31/2016
• Est. Priority Date: 09/14/2010
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Seo, Satoshi, Ikeda, Hisao, Kawata, Takuya
• Primary Examiner(s): Tran, Thien F
• Application Number:
  US14/505,843
• Publication Number:
  US 20150054014A1
• Time in Patent Office: 606 Days
• Field of Search: 257/79, 257/98
• US Class Current: 1/1
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/56 Materials, e.g. epoxy or silicone resin
• CPC Class Codes: H01L 33/58 Optical field-shaping elements
• CPC Class Codes: H10K 50/858 comprising refractive means, e.g. lenses

Abstract

A solid-state light-emitting element includes a structure body having a property of transmitting visible light and an uneven structure on each of the top side and the bottom side thereof; a high refractive index material layer provided on one surface of the structure body; and a light-emitting body with a refractive index of greater than or equal to 1.6 provided over the high refractive index material layer. One surface of the high refractive index material layer is flatter than the other surface thereof which is in contact with the structure body. The refractive index of the high refractive index material layer is greater than or equal to 1.6. The refractive index of the structure body is greater than 1.0 and less than that of the high refractive index material layer.

Claims

1. A solid-state light-emitting element comprising:

a structure body capable of transmitting visible light, the structure body including;

a first layer, one surface of the first layer including a first uneven structure; and

a second layer, one surface of the second layer being in contact with the other surface of the first layer and the other surface of the second layer including a second uneven structure;

a high refractive index material layer over and in contact with the one surface of the first layer; and

an EL layer with a refractive index of greater than or equal to 1.6 over the high refractive index material layer,

wherein one surface of the high refractive index material layer is flatter than the other surface in contact with the first layer,

wherein a refractive index of the high refractive index material layer is greater than or equal to 1.6,

wherein a refractive index of the first layer and a refractive index of the second layer are greater than 1.0 and less than the refractive index of the high refractive index material layer, and

wherein the other surface of the second layer is an outermost surface of the solid-state light-emitting element from which light is extracted.

2. The solid-state light-emitting element according to claim 1, wherein the refractive index of the second layer is greater than the refractive index of the first layer.

3. The solid-state light-emitting element according to claim 1, wherein the refractive index of the first layer and the refractive index of the second layer are greater than or equal to 1.3.

4. The solid-state light-emitting element according to claim 1, wherein the refractive index of the high refractive index material layer is greater than or equal to 1.7.

5. The solid-state light-emitting element according to claim 1, wherein a size and height of unevenness of the first uneven structure is about 0.1 μ

m to 100 μ

m.

6. The solid-state light-emitting element according to claim 1, wherein a size and height of unevenness of the second uneven structure is about 0.1 μ

m to 1000 μ

m.

7. A light-emitting device comprising the solid-state light-emitting element according to claim 1.

8. A solid-state light-emitting element comprising:

a first resin layer comprising;

a first layer, one surface of the first layer including a first uneven structure. and

a second layer, one surface of the second layer being in contact with the other surface of the first layer and the other surface of the second layer including a second uneven structure;

a second resin layer, one surface of the second resin layer being over and in contact with the one surface of the first layer and the other surface of the second resin layer being flatter than the one surface of the second resin layer, wherein a refractive index of the second resin layer is higher than a refractive index of the first resin layer;

a first electrode over the second resin layer;

a first EL layer over the first electrode;

a second EL layer over the first EL layer; and

a second electrode over the second EL layer,

wherein a refractive index of each of the second resin layer, the first EL layer, and the second EL layer is greater than or equal to 1.6 and

wherein the refractive index of the first resin layer is greater than 1.0.

9. The solid-state light-emitting element according to claim 8, wherein the other surface of the second layer is an outermost surface of the solid-state light-emitting element from which light is extracted.

10. The solid-state light-emitting element according to claim 8, further including a charge generation layer between the first EL layer and the second EL layer.

11. The solid-state light-emitting element according to claim 8, further including a nitride film with a refractive index of greater than or equal to 1.6 between the second resin layer and the first electrode.

12. The solid-state light-emitting element according to claim 8, wherein the refractive index of the second resin layer is greater than or equal to 1.7.

13. The solid-state light-emitting element according to claim 8, wherein a size and height of unevenness of the first uneven structure is about 0.1 μ

m to 100 μ

m.

14. The solid-state light-emitting element according to claim 8, wherein a size and height of unevenness of the second uneven structure is about 0.1 μ

m to 1000 μ

m.

15. A light-emitting device comprising the solid-state light-emitting element according to claim 8.