Optical device structure using GaN substrates and growth structures for laser applications

• US 9,356,430 B2
• Filed: 06/29/2015
• Issued: 05/31/2016
• Est. Priority Date: 04/13/2009
• Status: Active Grant

• Current Assignee: Kyocera SLD Laser Incorporated (Kyocera Corporation)
• Original Assignee: Soraa Laser Diode, Inc. (Kyocera Corporation)
• Inventors: Raring, James W.
• Primary Examiner(s): NGUYEN, TUAN N
• Application Number:
  US14/754,043
• Publication Number:
  US 20150318670A1
• Time in Patent Office: 337 Days
• Field of Search: 257/E21.211, 438/39
• US Class Current: 1/1
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: H01S 5/0014 Measuring characteristics or properties thereof measuring techniques per se G01J, G01K, G01N, G01R
• CPC Class Codes: H01S 5/0202 Cleaving
• CPC Class Codes: H01S 5/028 Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
• CPC Class Codes: H01S 5/0287 Facet reflectivity
• CPC Class Codes: H01S 5/1085 Oblique facets
• CPC Class Codes: H01S 5/2009 by using electron barrier layers
• CPC Class Codes: H01S 5/2031 characterized by special waveguide layers, e.g. asymmetric waveguide layers or defined bandgap discontinuities
• CPC Class Codes: H01S 5/2201 in a specific crystallographic orientation
• CPC Class Codes: H01S 5/3202 grown on specifically orientated substrates, or using orientation dependent growth
• CPC Class Codes: H01S 5/32025 non-polar orientation
• CPC Class Codes: H01S 5/320275 semi-polar orientation
• CPC Class Codes: H01S 5/3213 asymmetric clading layers
• CPC Class Codes: H01S 5/34333 with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
• CPC Class Codes: H01S 5/4025 Array arrangements, e.g. constituted by discrete laser diodes or laser bar H01S5/42 takes precedence

Abstract

Optical devices having a structured active region configured for selected wavelengths of light emissions are disclosed.

Claims

1. A device comprising:

a gallium and nitrogen containing surface having a {30-31} crystalline orientation;

a laser stripe region formed overlying a portion of the gallium and nitrogen containing surface, the laser stripe region being characterized by a cavity orientation parallel to a projection of the c-direction, the laser stripe region having a first end and a second end;

a first cleaved facet provided on the first end of the laser stripe region, the first cleaved facet comprising a first semipolar surface; and

a second cleaved facet provided on the second end of the laser stripe region, the second cleaved facet comprising a second semipolar surface,

wherein the first cleaved facet is substantially parallel with the second cleaved facet;

the {30-31} crystalline orientation is selected from either (30-31) or (30-3-1); and

the {30-31} crystalline orientation is off-cut less than +/−

8 degrees toward or away from an a-plane.

2. The device of claim 1 wherein the first cleaved facet comprises a first mirror surface, the first mirror surface comprising a reflective coating, the reflective coating being selected from silicon dioxide, hafnia, titania, tantalum pentoxide, zirconia, or aluminum oxide.

3. The device of claim 2 wherein the first mirror surface is provided by a scribing process and a breaking process.

4. The device of claim 3 wherein the scribing process is performed by diamond scribing or laser scribing.

5. The device of claim 3 wherein the scribing process is performed with a laser using a top-side skip-scribe technique.

6. The device of claim 1 wherein the second cleaved facet comprises a second mirror surface.

7. The device of claim 6 wherein the second mirror surface comprises an anti-reflective coating.

8. A device comprising:

a gallium and nitrogen containing surface having a {30-31} crystalline orientation, the {30-31} crystalline orientation being selected from either (30-31) or (30-3-1);

an active region overlying a portion of the gallium and nitrogen containing surface;

a laser stripe region formed overlying the active region, the laser stripe region being characterized by a cavity orientation parallel to a projection of the c-direction, the laser stripe region having a first end and a second end;

a first facet provided on the first end of the laser stripe region, the first facet being substantially orthogonal to the laser stripe region and provided by a scribing process and a breaking process; and

a second facet provided on the second end of the laser stripe region, the second facet being substantially orthogonal to the laser stripe region and provided by the scribing process and the breaking process;

wherein the scribing process is performed with a laser using a top-side skip-scribe technique or a back-side scribing technique, the first facet is substantially parallel with the second facet, the {30-31} crystalline orientation is off-cut less than +/−

8 degrees toward or away from an a-plane, and the active region is configured to emit light characterized by a wavelength ranging from about 500 nm to about 580 nm, or from about 430 nm to about 480 nm.

9. The device of claim 8 wherein the first facet comprises a first mirror surface, the first mirror surface comprising a reflective coating, the reflective coating being selected from silicon dioxide, hafnia, titania, tantalum pentoxide, zirconia, or aluminum oxide.

10. The device of claim 8 wherein the second facet comprises a second mirror surface, the second mirror surface comprising an anti-reflective coating.

11. The device of claim 8 wherein a length of the laser stripe region ranges from about 50 microns to about 3000 microns.