Method for read disturbance management in non-volatile memory devices
First Claim
1. A method for read disturbance management in a non-volatile memory device which includes a plurality of memory sections each having a plurality of data units, the method comprising:
- performing a read operation on the plurality of data units;
updating a read count of a first memory section among the plurality of memory sections according to a total read number of the read operation which has been performed on the plurality of data units of the first memory section since data was last written into the first memory section;
scanning the first memory section for acquiring error bits in all corresponding data units when the read count of the first memory section exceeds a first read count threshold, and updating the first read count threshold to a second read count threshold and resetting the read count of the first memory section when the error bits in all corresponding data units do not exceed an error threshold, wherein the second read count threshold is smaller than the first read count threshold; and
moving the data from the first memory section to a second memory section among the plurality of memory sections when the error bits in any corresponding data unit exceeds the error threshold.
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Abstract
When performing a read operation on a non-volatile memory device which includes a plurality of memory sections each corresponding to a plurality of data units, the read count of a specific memory section and the error bits of its corresponding data units are monitored for determining whether data relocation should be perform. When the read count of the specific section exceeds a read count threshold and the error bits of any corresponding data unit exceeds an error threshold, data is moved from the specific memory section to another memory section of the non-volatile memory device, thereby preventing read disturbance from occurring in the specific memory sections.
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Citations
13 Claims
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1. A method for read disturbance management in a non-volatile memory device which includes a plurality of memory sections each having a plurality of data units, the method comprising:
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performing a read operation on the plurality of data units; updating a read count of a first memory section among the plurality of memory sections according to a total read number of the read operation which has been performed on the plurality of data units of the first memory section since data was last written into the first memory section; scanning the first memory section for acquiring error bits in all corresponding data units when the read count of the first memory section exceeds a first read count threshold, and updating the first read count threshold to a second read count threshold and resetting the read count of the first memory section when the error bits in all corresponding data units do not exceed an error threshold, wherein the second read count threshold is smaller than the first read count threshold; and moving the data from the first memory section to a second memory section among the plurality of memory sections when the error bits in any corresponding data unit exceeds the error threshold. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A method for read disturbance management in a flash memory device which includes a plurality of blocks each having a plurality of pages, the method comprising:
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performing a read operation on the plurality of pages; updating a read count of a first block among the plurality of blocks according to a total number of the read operation which has been performed on the plurality of pages of the first block since data was last written into the first block; scanning the first block for acquiring error bit values of all pages in the first block when the read count of the first block exceeds a first read count threshold, and updating the first read count threshold to a second read count threshold and resetting the read count of the first block when the error bit values of all pages in the first block do not exceed an error threshold, wherein the second read count threshold is smaller than the first read count threshold; and moving the data from the first block to a second block among the plurality of blocks when the error bit value of any page in the first block exceeds the error threshold. - View Dependent Claims (8, 9, 10, 11, 12, 13)
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Specification