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Method for read disturbance management in non-volatile memory devices

  • US 9,361,182 B2
  • Filed: 05/20/2014
  • Issued: 06/07/2016
  • Est. Priority Date: 05/20/2014
  • Status: Active Grant
First Claim
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1. A method for read disturbance management in a non-volatile memory device which includes a plurality of memory sections each having a plurality of data units, the method comprising:

  • performing a read operation on the plurality of data units;

    updating a read count of a first memory section among the plurality of memory sections according to a total read number of the read operation which has been performed on the plurality of data units of the first memory section since data was last written into the first memory section;

    scanning the first memory section for acquiring error bits in all corresponding data units when the read count of the first memory section exceeds a first read count threshold, and updating the first read count threshold to a second read count threshold and resetting the read count of the first memory section when the error bits in all corresponding data units do not exceed an error threshold, wherein the second read count threshold is smaller than the first read count threshold; and

    moving the data from the first memory section to a second memory section among the plurality of memory sections when the error bits in any corresponding data unit exceeds the error threshold.

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