Recording read heads with a multi-layer AFM layer methods and apparatuses

• US 9,361,913 B1
• Filed: 06/21/2013
• Issued: 06/07/2016
• Est. Priority Date: 06/03/2013
• Status: Active Grant

• Current Assignee: Western Digital Technologies Incorporated (Western Digital Corporation)
• Original Assignee: Western Digital (Fremont) LLC (Western Digital Corporation)
• Inventors: Zheng, Yuankai, Leng, Qunwen
• Primary Examiner(s): Bernatz, Kevin
• Application Number:
  US13/923,991
• Time in Patent Office: 1,082 Days
• Field of Search: None
• US Class Current: 1/1
• CPC Class Codes: C23C 14/14 Metallic material, boron or silicon
• CPC Class Codes: G11B 5/1272 Assembling or shaping of elements G11B5/1278 takes precedence
• CPC Class Codes: G11B 5/3143 including additional layers for improving the electromagnetic transducing properties of the basic structure, e.g. for flux coupling, guiding or shielding G11B5/3116, G11B5/312 take precedence
• CPC Class Codes: H01F 10/135 containing transition metals
• CPC Class Codes: H01F 10/3218 Exchange coupling of magnetic films via an antiferromagnetic interface H01F10/3268 takes precedence
• CPC Class Codes: H01F 10/3254 the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
• CPC Class Codes: H01F 10/3268 the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn

Abstract

Apparatuses and methods of recording read heads with a multi-layer anti-ferromagnetic (AFM) layer are provided. The AFM layer has gradient Manganese (Mn) compositions. A multi-layer AFM layer comprises a plurality of sub-layers having different Mn compositions. An upper sub-layer has a higher Mn composition than an lower sub-layer. Different types of gases may be used to deposit each sub-layer and the flow of each gas may be adjusted.

Claims

1. A read head, comprising:

a non-magnetic spacer layer;

an anti-ferromagnetic (AFM) layer directly on top of the spacer layer, the AFM layer consisting of;

a first AFM sub-layer comprising Manganese (Mn); and

a second AFM sub-layer directly on top of the first AFM sub-layer and comprising Mn, wherein the second AFM sub-layer has a higher Mn composition than the first AFM sub-layer; and

a pinned magnetic layer directly on top of the second AFM sub-layer.

2. The read head of claim 1, wherein the AFM layer has a gradient Manganese (Mn) composition.

3. The read head of claim 1, wherein the first AFM sub-layer comprises a first iridium manganese (IrMn) film and the second AFM sub-layer comprises a second IrMn film.

4. The read head of claim 1, wherein the first AFM sub-layer and the second AFM sub-layer are deposited from a target using different gases.

5. The read head of claim 4, wherein the first AFM sub-layer is deposited using Argon gas.

6. The read head of claim 4, wherein the second AFM sub-layer is deposited using Krypton gas.

7. The read head of claim 1, wherein the AFM layer has a total thickness of about 58 angstroms.

8. The read of claim 1, wherein the first AFM sub-layer has a thickness of about 28 angstroms.

9. The read of claim 1, wherein the second AFM sub-layer has a thickness of about 30 angstroms.